Characterization of MBE-grown II-VI semiconductor distributed Bragg reflectors

F. C. Peiris, Sang Hoon Lee, U. Bindley, J. K. Furdyna, A. M. Stuckey, M. R. Martin, J. R. Buschert

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have grown distributed Bragg reflectors (DBRs) using two different combinations of II-VI semiconductor materials: ZnSe/Zn0.84Mg0.16S0.07Se0.93 and ZnSe/ZnTe. The nearly lattice matched ZnSeZnMgSSe system showed a reflectivity maximum near 470 nm, but only with the modest value of 70%. The strained ZnSe/ZnTe system, on the other hand, has over 90% reflectivity near 725 nm. Furthermore, the higher reflectivity in the ZnSe/ZnTe system is achieved with only 15 periods, compared to the 50 periods in the ZnSe/ZnMgSSe system. It is also found that the ZnSe/ZnTe system produces a stop band nearly 5 times wider than the ZnSe/ZnMgSSe system.

Original languageEnglish
Pages (from-to)1040-1043
Number of pages4
JournalJournal of Crystal Growth
Volume201
DOIs
Publication statusPublished - 1999 May 1
Externally publishedYes

Fingerprint

Distributed Bragg reflectors
Bragg reflectors
Molecular beam epitaxy
reflectance
Semiconductor materials
II-VI semiconductors

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Peiris, F. C., Lee, S. H., Bindley, U., Furdyna, J. K., Stuckey, A. M., Martin, M. R., & Buschert, J. R. (1999). Characterization of MBE-grown II-VI semiconductor distributed Bragg reflectors. Journal of Crystal Growth, 201, 1040-1043. https://doi.org/10.1016/S0022-0248(98)01520-6

Characterization of MBE-grown II-VI semiconductor distributed Bragg reflectors. / Peiris, F. C.; Lee, Sang Hoon; Bindley, U.; Furdyna, J. K.; Stuckey, A. M.; Martin, M. R.; Buschert, J. R.

In: Journal of Crystal Growth, Vol. 201, 01.05.1999, p. 1040-1043.

Research output: Contribution to journalArticle

Peiris, FC, Lee, SH, Bindley, U, Furdyna, JK, Stuckey, AM, Martin, MR & Buschert, JR 1999, 'Characterization of MBE-grown II-VI semiconductor distributed Bragg reflectors', Journal of Crystal Growth, vol. 201, pp. 1040-1043. https://doi.org/10.1016/S0022-0248(98)01520-6
Peiris, F. C. ; Lee, Sang Hoon ; Bindley, U. ; Furdyna, J. K. ; Stuckey, A. M. ; Martin, M. R. ; Buschert, J. R. / Characterization of MBE-grown II-VI semiconductor distributed Bragg reflectors. In: Journal of Crystal Growth. 1999 ; Vol. 201. pp. 1040-1043.
@article{382375d4f74f4c88a2d384477e0af490,
title = "Characterization of MBE-grown II-VI semiconductor distributed Bragg reflectors",
abstract = "We have grown distributed Bragg reflectors (DBRs) using two different combinations of II-VI semiconductor materials: ZnSe/Zn0.84Mg0.16S0.07Se0.93 and ZnSe/ZnTe. The nearly lattice matched ZnSeZnMgSSe system showed a reflectivity maximum near 470 nm, but only with the modest value of 70{\%}. The strained ZnSe/ZnTe system, on the other hand, has over 90{\%} reflectivity near 725 nm. Furthermore, the higher reflectivity in the ZnSe/ZnTe system is achieved with only 15 periods, compared to the 50 periods in the ZnSe/ZnMgSSe system. It is also found that the ZnSe/ZnTe system produces a stop band nearly 5 times wider than the ZnSe/ZnMgSSe system.",
author = "Peiris, {F. C.} and Lee, {Sang Hoon} and U. Bindley and Furdyna, {J. K.} and Stuckey, {A. M.} and Martin, {M. R.} and Buschert, {J. R.}",
year = "1999",
month = "5",
day = "1",
doi = "10.1016/S0022-0248(98)01520-6",
language = "English",
volume = "201",
pages = "1040--1043",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

TY - JOUR

T1 - Characterization of MBE-grown II-VI semiconductor distributed Bragg reflectors

AU - Peiris, F. C.

AU - Lee, Sang Hoon

AU - Bindley, U.

AU - Furdyna, J. K.

AU - Stuckey, A. M.

AU - Martin, M. R.

AU - Buschert, J. R.

PY - 1999/5/1

Y1 - 1999/5/1

N2 - We have grown distributed Bragg reflectors (DBRs) using two different combinations of II-VI semiconductor materials: ZnSe/Zn0.84Mg0.16S0.07Se0.93 and ZnSe/ZnTe. The nearly lattice matched ZnSeZnMgSSe system showed a reflectivity maximum near 470 nm, but only with the modest value of 70%. The strained ZnSe/ZnTe system, on the other hand, has over 90% reflectivity near 725 nm. Furthermore, the higher reflectivity in the ZnSe/ZnTe system is achieved with only 15 periods, compared to the 50 periods in the ZnSe/ZnMgSSe system. It is also found that the ZnSe/ZnTe system produces a stop band nearly 5 times wider than the ZnSe/ZnMgSSe system.

AB - We have grown distributed Bragg reflectors (DBRs) using two different combinations of II-VI semiconductor materials: ZnSe/Zn0.84Mg0.16S0.07Se0.93 and ZnSe/ZnTe. The nearly lattice matched ZnSeZnMgSSe system showed a reflectivity maximum near 470 nm, but only with the modest value of 70%. The strained ZnSe/ZnTe system, on the other hand, has over 90% reflectivity near 725 nm. Furthermore, the higher reflectivity in the ZnSe/ZnTe system is achieved with only 15 periods, compared to the 50 periods in the ZnSe/ZnMgSSe system. It is also found that the ZnSe/ZnTe system produces a stop band nearly 5 times wider than the ZnSe/ZnMgSSe system.

UR - http://www.scopus.com/inward/record.url?scp=0032667085&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032667085&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(98)01520-6

DO - 10.1016/S0022-0248(98)01520-6

M3 - Article

VL - 201

SP - 1040

EP - 1043

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -