Characterization of MBE-grown II-VI semiconductor distributed Bragg reflectors

F. C. Peiris, Sang Hoon Lee, U. Bindley, J. K. Furdyna, A. M. Stuckey, M. R. Martin, J. R. Buschert

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Abstract

We have grown distributed Bragg reflectors (DBRs) using two different combinations of II-VI semiconductor materials: ZnSe/Zn0.84Mg0.16S0.07Se0.93 and ZnSe/ZnTe. The nearly lattice matched ZnSeZnMgSSe system showed a reflectivity maximum near 470 nm, but only with the modest value of 70%. The strained ZnSe/ZnTe system, on the other hand, has over 90% reflectivity near 725 nm. Furthermore, the higher reflectivity in the ZnSe/ZnTe system is achieved with only 15 periods, compared to the 50 periods in the ZnSe/ZnMgSSe system. It is also found that the ZnSe/ZnTe system produces a stop band nearly 5 times wider than the ZnSe/ZnMgSSe system.

Original languageEnglish
Pages (from-to)1040-1043
Number of pages4
JournalJournal of Crystal Growth
Volume201
DOIs
Publication statusPublished - 1999 May 1
Externally publishedYes

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ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Peiris, F. C., Lee, S. H., Bindley, U., Furdyna, J. K., Stuckey, A. M., Martin, M. R., & Buschert, J. R. (1999). Characterization of MBE-grown II-VI semiconductor distributed Bragg reflectors. Journal of Crystal Growth, 201, 1040-1043. https://doi.org/10.1016/S0022-0248(98)01520-6