Characterization of mismatched SiGe grown on low temperature Si buffer layers by molecular beam epitaxy

K. K. Linder, F. C. Zhang, J. S. Rieh, P. Bhattacharya

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Several types of buffer layer structures, including superlattice and step-graded layers, have been employed to reduce the threading dislocation in SiGe epitaxial layers. A new technique, using a 0.1 μm thick Si buffer grown at 450°C by molecular beam epitaxy, provides the best results. For a 0.5 μm thick Si0.85Ge0.15 layer, the dislocation density is ≤ 105 cm-2. Hall measurements indicate an improvement in the hole mobility of a 1 μm thick Boron doped Si0.7Ge0.3 layer. A SiGe/Si heterojunction bipolar transistor has been fabricated exploiting the low temperature Si buffer. Transmission electron microscopy of the structure does not indicate any evidence of threading dislocations.

Original languageEnglish
Pages (from-to)499-503
Number of pages5
JournalJournal of Crystal Growth
Volume175-176
Issue numberPART 1
DOIs
Publication statusPublished - 1997 May
Externally publishedYes

Keywords

  • DLTS
  • LT-Si buffer
  • TEM
  • Threading dislocation density

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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