Characterization of mismatched SiGe grown on low temperature Si buffer layers by molecular beam epitaxy

K. K. Linder, F. C. Zhang, Jae-Sung Rieh, P. Bhattacharya

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Several types of buffer layer structures, including superlattice and step-graded layers, have been employed to reduce the threading dislocation in SiGe epitaxial layers. A new technique, using a 0.1 μm thick Si buffer grown at 450°C by molecular beam epitaxy, provides the best results. For a 0.5 μm thick Si0.85Ge0.15 layer, the dislocation density is ≤ 105 cm-2. Hall measurements indicate an improvement in the hole mobility of a 1 μm thick Boron doped Si0.7Ge0.3 layer. A SiGe/Si heterojunction bipolar transistor has been fabricated exploiting the low temperature Si buffer. Transmission electron microscopy of the structure does not indicate any evidence of threading dislocations.

Original languageEnglish
Pages (from-to)499-503
Number of pages5
JournalJournal of Crystal Growth
Volume175-176
Issue numberPART 1
Publication statusPublished - 1997 May 1
Externally publishedYes

Fingerprint

Hole mobility
Epitaxial layers
Heterojunction bipolar transistors
Buffer layers
Dislocations (crystals)
Molecular beam epitaxy
Boron
Buffers
molecular beam epitaxy
buffers
Transmission electron microscopy
Temperature
hole mobility
bipolar transistors
heterojunctions
boron
transmission electron microscopy

Keywords

  • DLTS
  • LT-Si buffer
  • TEM
  • Threading dislocation density

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Characterization of mismatched SiGe grown on low temperature Si buffer layers by molecular beam epitaxy. / Linder, K. K.; Zhang, F. C.; Rieh, Jae-Sung; Bhattacharya, P.

In: Journal of Crystal Growth, Vol. 175-176, No. PART 1, 01.05.1997, p. 499-503.

Research output: Contribution to journalArticle

Linder, K. K. ; Zhang, F. C. ; Rieh, Jae-Sung ; Bhattacharya, P. / Characterization of mismatched SiGe grown on low temperature Si buffer layers by molecular beam epitaxy. In: Journal of Crystal Growth. 1997 ; Vol. 175-176, No. PART 1. pp. 499-503.
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