Characterization of mocvd-prepared cis solar cells

Seung Hoon Lee, Gyu Hyun Lee, Hae Seok Lee, Donghwan Kim, Yoon Mook Kang

Research output: Contribution to journalArticlepeer-review

Abstract

Chalcopyrite Cu(In,Ga)Se2 (CIGS) solar cells prepared via metal-organic chemical vapor deposition (MOCVD) are one of the candidates for highly advanced photovoltaic devices. This is because of their effectiveness and potential for reducing production costs through large-scale production. However, research on MOCVD-prepared solar cells is progressing slower than that on other types of solar cells, primarily because the preparation of CuInSe2 (CIS)-based films via MOCVD is relatively more sophisticated. In this study, we analyzed CIS solar cells prepared via three-stage MOCVD and processed with relatively simple precursors and techniques. We achieved an energy-conversion efficiency of 7.39% without applying a buffer layer. Instead, we applied a Cu-deficient layer to create a buried pn junction. Ultimately, we demonstrated that the fabrication of fully-MOCVD-processed CIS photovoltaic devices is feasible.

Original languageEnglish
Article number7721
JournalEnergies
Volume14
Issue number22
DOIs
Publication statusPublished - 2021 Nov 1

Keywords

  • Buried junction
  • CIGS solar cell
  • EBIC
  • MOCVD
  • MOCVD-prepared CIGS

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Fuel Technology
  • Energy Engineering and Power Technology
  • Energy (miscellaneous)
  • Control and Optimization
  • Electrical and Electronic Engineering

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