Characterization of optical and crystal qualities in InxGa1-xN/InyGa1-yN multi-quantum wells grown by MOCVD

Sung Nam Lee, Tan Sakong, Wonseok Lee, Hosun Paek, Moonsuk Seon, In-Hwan Lee, Okhyun Nam, Yongjo Park

Research output: Contribution to journalConference article

17 Citations (Scopus)

Abstract

We have investigated the optical and structural qualities of InxGa1-xN/InyGa1-yN multi-quantum wells (MQWs) on sapphire substrates using atomic force microscope (AFM), high resolution X-ray diffraction (HRXRD), and photoluminescence (PL). In0.08Ga0.92N/ In0.02Ga0.98N five MQWs were grown by metalorganic chemical vapor deposition with three different well growth rates. We found from HRXRD and AFM that the interface roughness of MQWs was improved and the density of threading dislocation with screw component was decreased from 1.2×109/cm2 to 2.5×107/cm2 with decreasing the growth rate. Moreover, PL measurements revealed that the MQWs grown with a lower growth rate represented higher PL intensity, narrower line width and less energy shift in power dependent PL. This implies that lower growth rate allows adatoms on the surface to have longer time to arrive at two-dimensional step ledges of growth front and thereby enhances crystal quality compared with higher growth rate, leading to enhanced optical and crystal quality of MQWs.

Original languageEnglish
Pages (from-to)256-261
Number of pages6
JournalJournal of Crystal Growth
Volume250
Issue number1-2
DOIs
Publication statusPublished - 2003 Mar 1
Externally publishedYes
EventACCGE-14 - Seatle, WA, United States
Duration: 2002 Aug 42002 Aug 9

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Metallorganic chemical vapor deposition
Semiconductor quantum wells
metalorganic chemical vapor deposition
quantum wells
Photoluminescence
Crystals
crystals
photoluminescence
Microscopes
X ray diffraction
microscopes
Adatoms
Aluminum Oxide
ledges
Sapphire
Linewidth
high resolution
screws
diffraction
adatoms

Keywords

  • A1. Atomic force microscopy
  • A3. Metalorganic chemical vapor deposition
  • Al. High resolution X-ray diffraction
  • B1. Nitrides

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Characterization of optical and crystal qualities in InxGa1-xN/InyGa1-yN multi-quantum wells grown by MOCVD. / Lee, Sung Nam; Sakong, Tan; Lee, Wonseok; Paek, Hosun; Seon, Moonsuk; Lee, In-Hwan; Nam, Okhyun; Park, Yongjo.

In: Journal of Crystal Growth, Vol. 250, No. 1-2, 01.03.2003, p. 256-261.

Research output: Contribution to journalConference article

Lee, Sung Nam ; Sakong, Tan ; Lee, Wonseok ; Paek, Hosun ; Seon, Moonsuk ; Lee, In-Hwan ; Nam, Okhyun ; Park, Yongjo. / Characterization of optical and crystal qualities in InxGa1-xN/InyGa1-yN multi-quantum wells grown by MOCVD. In: Journal of Crystal Growth. 2003 ; Vol. 250, No. 1-2. pp. 256-261.
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AB - We have investigated the optical and structural qualities of InxGa1-xN/InyGa1-yN multi-quantum wells (MQWs) on sapphire substrates using atomic force microscope (AFM), high resolution X-ray diffraction (HRXRD), and photoluminescence (PL). In0.08Ga0.92N/ In0.02Ga0.98N five MQWs were grown by metalorganic chemical vapor deposition with three different well growth rates. We found from HRXRD and AFM that the interface roughness of MQWs was improved and the density of threading dislocation with screw component was decreased from 1.2×109/cm2 to 2.5×107/cm2 with decreasing the growth rate. Moreover, PL measurements revealed that the MQWs grown with a lower growth rate represented higher PL intensity, narrower line width and less energy shift in power dependent PL. This implies that lower growth rate allows adatoms on the surface to have longer time to arrive at two-dimensional step ledges of growth front and thereby enhances crystal quality compared with higher growth rate, leading to enhanced optical and crystal quality of MQWs.

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