Characterization of planar pn heterojunction diodes constructed with Cu2O nanoparticle films and single ZnO nanowires

Kiyeol Kwak, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this study, we fabricate planar pn heterojunction diodes composed of Cu2O nanoparticle (NP) films and single ZnO nanowires (NWs) on SiO2 (300 nm)/Si substrates and investigate their characteristics in the dark and under the illumination of white light and 325 nm wavelength light. The diode at bias voltages of ±1 V shows rectification ratios of 10 (in the dark) and 34 (under the illumination of white light). On the other hand, the diode exposed to the 325 nm wavelength light exhibits Ohmic characteristics which are associated with efficient photocurrent generation in both the Cu 2O NP film and the single ZnO NW.

Original languageEnglish
Pages (from-to)3433-3436
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume13
Issue number5
DOIs
Publication statusPublished - 2013 May 1

Fingerprint

Nanowires
Nanoparticles
Heterojunctions
heterojunctions
Diodes
nanowires
diodes
Light
nanoparticles
Lighting
illumination
Wavelength
rectification
Bias voltage
Photocurrents
wavelengths
photocurrents
electric potential
Substrates

Keywords

  • Metal-oxide semiconductors
  • Nanomaterials
  • Photocurrent
  • Pn heterojunction

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

Cite this

Characterization of planar pn heterojunction diodes constructed with Cu2O nanoparticle films and single ZnO nanowires. / Kwak, Kiyeol; Cho, Kyoungah; Kim, Sangsig.

In: Journal of Nanoscience and Nanotechnology, Vol. 13, No. 5, 01.05.2013, p. 3433-3436.

Research output: Contribution to journalArticle

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AB - In this study, we fabricate planar pn heterojunction diodes composed of Cu2O nanoparticle (NP) films and single ZnO nanowires (NWs) on SiO2 (300 nm)/Si substrates and investigate their characteristics in the dark and under the illumination of white light and 325 nm wavelength light. The diode at bias voltages of ±1 V shows rectification ratios of 10 (in the dark) and 34 (under the illumination of white light). On the other hand, the diode exposed to the 325 nm wavelength light exhibits Ohmic characteristics which are associated with efficient photocurrent generation in both the Cu 2O NP film and the single ZnO NW.

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