Abstract
In this study, we fabricate planar pn heterojunction diodes composed of Cu2O nanoparticle (NP) films and single ZnO nanowires (NWs) on SiO2 (300 nm)/Si substrates and investigate their characteristics in the dark and under the illumination of white light and 325 nm wavelength light. The diode at bias voltages of ±1 V shows rectification ratios of 10 (in the dark) and 34 (under the illumination of white light). On the other hand, the diode exposed to the 325 nm wavelength light exhibits Ohmic characteristics which are associated with efficient photocurrent generation in both the Cu 2O NP film and the single ZnO NW.
| Original language | English |
|---|---|
| Pages (from-to) | 3433-3436 |
| Number of pages | 4 |
| Journal | Journal of Nanoscience and Nanotechnology |
| Volume | 13 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2013 May 1 |
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Keywords
- Metal-oxide semiconductors
- Nanomaterials
- Photocurrent
- Pn heterojunction
ASJC Scopus subject areas
- Condensed Matter Physics
- Chemistry(all)
- Materials Science(all)
- Bioengineering
- Biomedical Engineering
Cite this
Characterization of planar pn heterojunction diodes constructed with Cu2O nanoparticle films and single ZnO nanowires. / Kwak, Kiyeol; Cho, Kyoungah; Kim, Sangsig.
In: Journal of Nanoscience and Nanotechnology, Vol. 13, No. 5, 01.05.2013, p. 3433-3436.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Characterization of planar pn heterojunction diodes constructed with Cu2O nanoparticle films and single ZnO nanowires
AU - Kwak, Kiyeol
AU - Cho, Kyoungah
AU - Kim, Sangsig
PY - 2013/5/1
Y1 - 2013/5/1
N2 - In this study, we fabricate planar pn heterojunction diodes composed of Cu2O nanoparticle (NP) films and single ZnO nanowires (NWs) on SiO2 (300 nm)/Si substrates and investigate their characteristics in the dark and under the illumination of white light and 325 nm wavelength light. The diode at bias voltages of ±1 V shows rectification ratios of 10 (in the dark) and 34 (under the illumination of white light). On the other hand, the diode exposed to the 325 nm wavelength light exhibits Ohmic characteristics which are associated with efficient photocurrent generation in both the Cu 2O NP film and the single ZnO NW.
AB - In this study, we fabricate planar pn heterojunction diodes composed of Cu2O nanoparticle (NP) films and single ZnO nanowires (NWs) on SiO2 (300 nm)/Si substrates and investigate their characteristics in the dark and under the illumination of white light and 325 nm wavelength light. The diode at bias voltages of ±1 V shows rectification ratios of 10 (in the dark) and 34 (under the illumination of white light). On the other hand, the diode exposed to the 325 nm wavelength light exhibits Ohmic characteristics which are associated with efficient photocurrent generation in both the Cu 2O NP film and the single ZnO NW.
KW - Metal-oxide semiconductors
KW - Nanomaterials
KW - Photocurrent
KW - Pn heterojunction
UR - http://www.scopus.com/inward/record.url?scp=84876893601&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84876893601&partnerID=8YFLogxK
U2 - 10.1166/jnn.2013.7237
DO - 10.1166/jnn.2013.7237
M3 - Article
C2 - 23858873
AN - SCOPUS:84876893601
VL - 13
SP - 3433
EP - 3436
JO - Journal of Nanoscience and Nanotechnology
JF - Journal of Nanoscience and Nanotechnology
SN - 1533-4880
IS - 5
ER -