Characterization of potential-induced degradation and recovery in cigs solar cells

Solhee Lee, Soohyun Bae, Se Jin Park, Jihye Gwak, Jaeho Yun, Yoon Mook Kang, Donghwan Kim, Young Joo Eo, Hae Seok Lee

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


The potential-induced degradation (PID) mechanism in Cu(In,Ga)(Se,S)2 (CIGS) thin-film solar cells, which are alternative energy sources with a high efficiency (>23%) and upscaling possibilities, remains unclear. Therefore, the cause of PID in CIGS solar cells was investigated in this study at the cell level. First, an appropriate PID experiment structure at the cell level was determined. Subsequently, PID and recovery tests were conducted to confirm the PID phenomenon. Light current–voltage (I–V), dark I–V, and external quantum efficiency (EQE) analyses were conducted to determine changes in the cell characteristics. In addition, capacitance–voltage (C–V) measurements were carried out to determine the doping concentration and width of the space charge region (SCR). Based on the results, the causes of PID and recovery of CIGS solar cells were explored, and it was found that PID occurs due to changes in the bulk doping concentration and built-in potential at the junction. Furthermore, by distinguishing the effects of temperature and voltage, it was found that PID phenomena occurred when potential difference was involved.

Original languageEnglish
Article number4628
Issue number15
Publication statusPublished - 2021 Aug 1


  • CIGS solar cells
  • Photovoltaics
  • Potential-induced degradation
  • Recovery
  • Solar cell

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Fuel Technology
  • Energy Engineering and Power Technology
  • Energy (miscellaneous)
  • Control and Optimization
  • Electrical and Electronic Engineering


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