Characterization of Si-doped GaN on (00.1) sapphire grown by MOCVD

Chang Soo Kim, Dong Kun Lee, Cheul Ro Lee, Sam Kyu Noh, In Hwan Lee, In Ho Bae

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

We investigated structural, electrical and optical properties and their relationships for MOCVD grown Si-doped GaN with different doping levels. The changes in structural properties such as strain, crystallinity and strain relaxation as a function of carrier concentrations were measured by high-resolution triple-axis X-ray diffraction and reciprocal space mapping technique. As the carrier concentration of the samples increases from 1.6×1018 to 9.5×1018/cm3 Hall mobility decreases from 222 to 170 cm2/Vsec, and peak intensity ratio of band edge to yellow luminescence in photoluminescence spectra decreases too. The variation of mosaic spread along [00.1] direction determined from full width at half maximum (FWHM) of GaN (00.2) peaks shows good agreement with the variation in Hall mobility. In addition, dislocation density determined from FWHM of (10.2) peaks is shown to be related to the variation in the intensity of yellow luminescence in PL spectra.

Original languageEnglish
Pages (from-to)567-572
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume482
DOIs
Publication statusPublished - 1997
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: 1997 Dec 11997 Dec 4

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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