Characterization of SiC nanowires grown by APCVD using single precursors

Dae Ho Rho, Jae Soo Kim, Dong Jin Byun, Jae Woong Yang, Jae Hoon Lee, Na Ri Kim

Research output: Contribution to journalConference article

Abstract

SiC nanowire was grown by APCVD using single precursors. Grown SiC nanowires had 10-60nm diameters and lengths of several micrometers. Nanowire's diameters and lengths were varied with kind of catalysts. Nanowire's growth scheme was divided by two regions with diameter of nanowire. At first region, nanowire was grown by VLS (vapor-liquid-solid) mechanism, but at the second region, nanowire growth was made by VS (vapor-solid) reaction. These differences were made from limitations of growth rate and deactivation effects. Growth temperature, time and flow rates of source gases were affected nanowire's diametesr and its lengths. And kind of catalysts, coating methods and precursors were affected growth direction and microstructures too.

Original languageEnglish
Article numberF7.16
Pages (from-to)317-322
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume832
Publication statusPublished - 2005
Event2004 MRS Fall Meeting - Boston, MA, United States
Duration: 2004 Nov 292004 Dec 2

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Rho, D. H., Kim, J. S., Byun, D. J., Yang, J. W., Lee, J. H., & Kim, N. R. (2005). Characterization of SiC nanowires grown by APCVD using single precursors. Materials Research Society Symposium Proceedings, 832, 317-322. [F7.16].