Characterization of SiNx:H thin film as a hydrogen passivation layer for silicon solar cells with passivated contacts

Jae Eun Kim, Se Jin Park, Ji Yeon Hyun, Hyomin Park, Soohyun Bae, Kwang sun Ji, Hyunho Kim, Kyung Dong Lee, Yoon Mook Kang, Haeseok Lee, Donghwan Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Silicon nitride (SiNx:H) films are generally used as passivation and anti-reflection layers in solar cells, and they are usually made by plasma-enhanced chemical vapor deposition (PECVD). Silicon nitride could act as a hydrogen diffusion source, and it also plays a role in chemical passivation. In this study, we investigated the improvement of the passivation characteristics of the passivated contact structure by a PECVD SiNx:H hydrogenation process and the characteristics of SiNx:H for improving the passivation characteristics. It was confirmed that the passivation characteristics cannot be predicted only by the mass density of the SiNx:H film, and the chemical bonding ratio in the SiNx:H thin film is also important. In addition, higher passivation characteristics can be obtained when SiNx:H thin films with higher S–H bond concentration and dominant N 2 Si–H 2 bonds are used.

Original languageEnglish
Pages (from-to)109-114
Number of pages6
JournalThin Solid Films
Volume675
DOIs
Publication statusPublished - 2019 Apr 1

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Keywords

  • Passivated contact
  • Passivation
  • Silicon nitride
  • Solar cells

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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