Characterization of SiNx:H thin film as a hydrogen passivation layer for silicon solar cells with passivated contacts

Jae Eun Kim; Se Jin Park; Ji Yeon Hyun; Hyomin Park; Soohyun Bae; Kwang sun Ji; Hyunho Kim; Kyung Dong Lee; Yoonmook Kang; Hae Seok Lee; Donghwan Kim

doi:10.1016/j.tsf.2019.02.016

Characterization of SiNx:H thin film as a hydrogen passivation layer for silicon solar cells with passivated contacts

Jae Eun Kim, Se Jin Park, Ji Yeon Hyun, Hyomin Park, Soohyun Bae, Kwang sun Ji, Hyunho Kim, Kyung Dong Lee, Yoonmook Kang, Hae Seok Lee, Donghwan Kim

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Silicon nitride (SiNx:H) films are generally used as passivation and anti-reflection layers in solar cells, and they are usually made by plasma-enhanced chemical vapor deposition (PECVD). Silicon nitride could act as a hydrogen diffusion source, and it also plays a role in chemical passivation. In this study, we investigated the improvement of the passivation characteristics of the passivated contact structure by a PECVD SiNx:H hydrogenation process and the characteristics of SiNx:H for improving the passivation characteristics. It was confirmed that the passivation characteristics cannot be predicted only by the mass density of the SiNx:H film, and the chemical bonding ratio in the SiNx:H thin film is also important. In addition, higher passivation characteristics can be obtained when SiNx:H thin films with higher S–H bond concentration and dominant N ₂ Si–H ₂ bonds are used.

Original language	English
Pages (from-to)	109-114
Number of pages	6
Journal	Thin Solid Films
Volume	675
DOIs	https://doi.org/10.1016/j.tsf.2019.02.016
Publication status	Published - 2019 Apr 1

Keywords

Passivated contact
Passivation
Silicon nitride
Solar cells

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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@article{e5f1b984675547ec8eb6031b39182c76,

title = "Characterization of SiNx:H thin film as a hydrogen passivation layer for silicon solar cells with passivated contacts",

abstract = " Silicon nitride (SiNx:H) films are generally used as passivation and anti-reflection layers in solar cells, and they are usually made by plasma-enhanced chemical vapor deposition (PECVD). Silicon nitride could act as a hydrogen diffusion source, and it also plays a role in chemical passivation. In this study, we investigated the improvement of the passivation characteristics of the passivated contact structure by a PECVD SiNx:H hydrogenation process and the characteristics of SiNx:H for improving the passivation characteristics. It was confirmed that the passivation characteristics cannot be predicted only by the mass density of the SiNx:H film, and the chemical bonding ratio in the SiNx:H thin film is also important. In addition, higher passivation characteristics can be obtained when SiNx:H thin films with higher S–H bond concentration and dominant N 2 Si–H 2 bonds are used.",

keywords = "Passivated contact, Passivation, Silicon nitride, Solar cells",

author = "Kim, {Jae Eun} and Park, {Se Jin} and Hyun, {Ji Yeon} and Hyomin Park and Soohyun Bae and Ji, {Kwang sun} and Hyunho Kim and Lee, {Kyung Dong} and Yoonmook Kang and Lee, {Hae Seok} and Donghwan Kim",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2019",

month = apr,

day = "1",

doi = "10.1016/j.tsf.2019.02.016",

language = "English",

volume = "675",

pages = "109--114",

journal = "Thin Solid Films",

issn = "0040-6090",

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TY - JOUR

T1 - Characterization of SiNx:H thin film as a hydrogen passivation layer for silicon solar cells with passivated contacts

AU - Kim, Jae Eun

AU - Park, Se Jin

AU - Hyun, Ji Yeon

AU - Park, Hyomin

AU - Bae, Soohyun

AU - Ji, Kwang sun

AU - Kim, Hyunho

AU - Lee, Kyung Dong

AU - Kang, Yoonmook

AU - Lee, Hae Seok

AU - Kim, Donghwan

PY - 2019/4/1

Y1 - 2019/4/1

N2 - Silicon nitride (SiNx:H) films are generally used as passivation and anti-reflection layers in solar cells, and they are usually made by plasma-enhanced chemical vapor deposition (PECVD). Silicon nitride could act as a hydrogen diffusion source, and it also plays a role in chemical passivation. In this study, we investigated the improvement of the passivation characteristics of the passivated contact structure by a PECVD SiNx:H hydrogenation process and the characteristics of SiNx:H for improving the passivation characteristics. It was confirmed that the passivation characteristics cannot be predicted only by the mass density of the SiNx:H film, and the chemical bonding ratio in the SiNx:H thin film is also important. In addition, higher passivation characteristics can be obtained when SiNx:H thin films with higher S–H bond concentration and dominant N 2 Si–H 2 bonds are used.

AB - Silicon nitride (SiNx:H) films are generally used as passivation and anti-reflection layers in solar cells, and they are usually made by plasma-enhanced chemical vapor deposition (PECVD). Silicon nitride could act as a hydrogen diffusion source, and it also plays a role in chemical passivation. In this study, we investigated the improvement of the passivation characteristics of the passivated contact structure by a PECVD SiNx:H hydrogenation process and the characteristics of SiNx:H for improving the passivation characteristics. It was confirmed that the passivation characteristics cannot be predicted only by the mass density of the SiNx:H film, and the chemical bonding ratio in the SiNx:H thin film is also important. In addition, higher passivation characteristics can be obtained when SiNx:H thin films with higher S–H bond concentration and dominant N 2 Si–H 2 bonds are used.

KW - Passivated contact

KW - Passivation

KW - Silicon nitride

KW - Solar cells

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U2 - 10.1016/j.tsf.2019.02.016

DO - 10.1016/j.tsf.2019.02.016

M3 - Article

AN - SCOPUS:85062023802

SN - 0040-6090

VL - 675

SP - 109

EP - 114

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Characterization of SiNx:H thin film as a hydrogen passivation layer for silicon solar cells with passivated contacts

Abstract

Keywords

ASJC Scopus subject areas

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