Characterization of sub-30 nm p+/n junction formed by plasma ion implantation

S. K. Baek, C. J. Choi, Tae Yeon Seong, H. Hwang, H. K. Kim, D. W. Moon

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We have investigated the electrical characteristics and junction depth and defect of ultrashallow junctions formed using plasma doping. Compared with ultralow energy boron ion implantation at 500 eV, the plasma doping process exhibits both a shallow junction depth and a low sheet resistance. The junction depths of the plasma-doped samples were 15 and 33 nm after annealing for 10 s at 900 and 950 °C, respectively. For the same junction depth, the sheet resistance of the B2H6 plasma-doped sample is an order of magnitude less than that of the 500 eV B ion implanted sample. Based on cross-sectional transmission electron microscope, deep level transient spectroscopy, and junction leakage current, the defects formed by the B2H6 plasma doping process can be completely removed by annealing at 950 °C for 10 s.

Original languageEnglish
Pages (from-to)3091-3093
Number of pages3
JournalJournal of the Electrochemical Society
Volume147
Issue number8
DOIs
Publication statusPublished - 2000 Aug 1
Externally publishedYes

Fingerprint

p-n junctions
Ion implantation
ion implantation
Plasmas
Sheet resistance
Doping (additives)
Annealing
Defects
Deep level transient spectroscopy
Boron
annealing
Leakage currents
defects
Electron microscopes
Ions
boron
leakage
electron microscopes
spectroscopy
ions

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Characterization of sub-30 nm p+/n junction formed by plasma ion implantation. / Baek, S. K.; Choi, C. J.; Seong, Tae Yeon; Hwang, H.; Kim, H. K.; Moon, D. W.

In: Journal of the Electrochemical Society, Vol. 147, No. 8, 01.08.2000, p. 3091-3093.

Research output: Contribution to journalArticle

Baek, S. K. ; Choi, C. J. ; Seong, Tae Yeon ; Hwang, H. ; Kim, H. K. ; Moon, D. W. / Characterization of sub-30 nm p+/n junction formed by plasma ion implantation. In: Journal of the Electrochemical Society. 2000 ; Vol. 147, No. 8. pp. 3091-3093.
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