Characterizations of direct band gap photoluminescence and electroluminescence from epi-Ge on Si

Szu Lin Cheng, Gary Shambat, Jesse Lu, Hyun-Yong Yu, Krishna Saraswat, Jelena Vuckovic, Yoshio Nishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Characterizations of direct gap emission from epi-Ge through both optical and electrical pumping were studied for the application of Si compatible light sources such as on-chip optical interconnect. In-situ doping technique with PH 3 during the epi-Ge growth was first applied to achieve high n-type doping concentrations. Photoluminescence (PL) measurements show that the direct band emission of Ge increases with higher doping concentration. This confirms that the Ge direct radiative recombination efficiency can be improved by band filling of electrons. A Ge n+/p light emitting diode (LED) on a Si substrate was then fabricated to study the electroluminescence (EL) properties related to the band filling. Direct band gap EL at 1.6 μm was also obtained from this Ge LED. Unlike ordinary electrically pumped devices, this LED shows a superlinear luminescence enhancement at high current. Thermal enhancement effects observed in temperature dependent EL spectra show the capability of this device to be operated at room temperature or above.

Original languageEnglish
Title of host publicationECS Transactions
Pages545-554
Number of pages10
Volume33
Edition6
DOIs
Publication statusPublished - 2010 Dec 1
Externally publishedYes
Event4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 2010 Oct 102010 Oct 15

Other

Other4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1010/10/15

Fingerprint

Electroluminescence
Light emitting diodes
Photoluminescence
Energy gap
Doping (additives)
Optical interconnects
Light sources
Luminescence
Temperature
Electrons
Substrates

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Cheng, S. L., Shambat, G., Lu, J., Yu, H-Y., Saraswat, K., Vuckovic, J., & Nishi, Y. (2010). Characterizations of direct band gap photoluminescence and electroluminescence from epi-Ge on Si. In ECS Transactions (6 ed., Vol. 33, pp. 545-554) https://doi.org/10.1149/1.3487585

Characterizations of direct band gap photoluminescence and electroluminescence from epi-Ge on Si. / Cheng, Szu Lin; Shambat, Gary; Lu, Jesse; Yu, Hyun-Yong; Saraswat, Krishna; Vuckovic, Jelena; Nishi, Yoshio.

ECS Transactions. Vol. 33 6. ed. 2010. p. 545-554.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Cheng, SL, Shambat, G, Lu, J, Yu, H-Y, Saraswat, K, Vuckovic, J & Nishi, Y 2010, Characterizations of direct band gap photoluminescence and electroluminescence from epi-Ge on Si. in ECS Transactions. 6 edn, vol. 33, pp. 545-554, 4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting, Las Vegas, NV, United States, 10/10/10. https://doi.org/10.1149/1.3487585
Cheng SL, Shambat G, Lu J, Yu H-Y, Saraswat K, Vuckovic J et al. Characterizations of direct band gap photoluminescence and electroluminescence from epi-Ge on Si. In ECS Transactions. 6 ed. Vol. 33. 2010. p. 545-554 https://doi.org/10.1149/1.3487585
Cheng, Szu Lin ; Shambat, Gary ; Lu, Jesse ; Yu, Hyun-Yong ; Saraswat, Krishna ; Vuckovic, Jelena ; Nishi, Yoshio. / Characterizations of direct band gap photoluminescence and electroluminescence from epi-Ge on Si. ECS Transactions. Vol. 33 6. ed. 2010. pp. 545-554
@inproceedings{e93edf1fdbe7482cbfd9b2b533c88e21,
title = "Characterizations of direct band gap photoluminescence and electroluminescence from epi-Ge on Si",
abstract = "Characterizations of direct gap emission from epi-Ge through both optical and electrical pumping were studied for the application of Si compatible light sources such as on-chip optical interconnect. In-situ doping technique with PH 3 during the epi-Ge growth was first applied to achieve high n-type doping concentrations. Photoluminescence (PL) measurements show that the direct band emission of Ge increases with higher doping concentration. This confirms that the Ge direct radiative recombination efficiency can be improved by band filling of electrons. A Ge n+/p light emitting diode (LED) on a Si substrate was then fabricated to study the electroluminescence (EL) properties related to the band filling. Direct band gap EL at 1.6 μm was also obtained from this Ge LED. Unlike ordinary electrically pumped devices, this LED shows a superlinear luminescence enhancement at high current. Thermal enhancement effects observed in temperature dependent EL spectra show the capability of this device to be operated at room temperature or above.",
author = "Cheng, {Szu Lin} and Gary Shambat and Jesse Lu and Hyun-Yong Yu and Krishna Saraswat and Jelena Vuckovic and Yoshio Nishi",
year = "2010",
month = "12",
day = "1",
doi = "10.1149/1.3487585",
language = "English",
isbn = "9781566778251",
volume = "33",
pages = "545--554",
booktitle = "ECS Transactions",
edition = "6",

}

TY - GEN

T1 - Characterizations of direct band gap photoluminescence and electroluminescence from epi-Ge on Si

AU - Cheng, Szu Lin

AU - Shambat, Gary

AU - Lu, Jesse

AU - Yu, Hyun-Yong

AU - Saraswat, Krishna

AU - Vuckovic, Jelena

AU - Nishi, Yoshio

PY - 2010/12/1

Y1 - 2010/12/1

N2 - Characterizations of direct gap emission from epi-Ge through both optical and electrical pumping were studied for the application of Si compatible light sources such as on-chip optical interconnect. In-situ doping technique with PH 3 during the epi-Ge growth was first applied to achieve high n-type doping concentrations. Photoluminescence (PL) measurements show that the direct band emission of Ge increases with higher doping concentration. This confirms that the Ge direct radiative recombination efficiency can be improved by band filling of electrons. A Ge n+/p light emitting diode (LED) on a Si substrate was then fabricated to study the electroluminescence (EL) properties related to the band filling. Direct band gap EL at 1.6 μm was also obtained from this Ge LED. Unlike ordinary electrically pumped devices, this LED shows a superlinear luminescence enhancement at high current. Thermal enhancement effects observed in temperature dependent EL spectra show the capability of this device to be operated at room temperature or above.

AB - Characterizations of direct gap emission from epi-Ge through both optical and electrical pumping were studied for the application of Si compatible light sources such as on-chip optical interconnect. In-situ doping technique with PH 3 during the epi-Ge growth was first applied to achieve high n-type doping concentrations. Photoluminescence (PL) measurements show that the direct band emission of Ge increases with higher doping concentration. This confirms that the Ge direct radiative recombination efficiency can be improved by band filling of electrons. A Ge n+/p light emitting diode (LED) on a Si substrate was then fabricated to study the electroluminescence (EL) properties related to the band filling. Direct band gap EL at 1.6 μm was also obtained from this Ge LED. Unlike ordinary electrically pumped devices, this LED shows a superlinear luminescence enhancement at high current. Thermal enhancement effects observed in temperature dependent EL spectra show the capability of this device to be operated at room temperature or above.

UR - http://www.scopus.com/inward/record.url?scp=79952668012&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952668012&partnerID=8YFLogxK

U2 - 10.1149/1.3487585

DO - 10.1149/1.3487585

M3 - Conference contribution

AN - SCOPUS:79952668012

SN - 9781566778251

VL - 33

SP - 545

EP - 554

BT - ECS Transactions

ER -