Characterizations of Ga-doped ZnO nanowires depending on growth temperature and target-substrate distance in hot-walled pulsed laser deposition

Kyoungwon Kim, Dong Hoon Park, Pulak Chandra Debnath, Dong Yun Lee, Sangsig Kim, Gun Eik Jang, Sang Yeol Lee

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Using a hot-walled pulsed laser deposition (HW-PLD), nanowires (NWs) comprising 3 weight% Ga-doped ZnO (3GZO) have been successfully grown on a sapphire substrate. The structural and optical properties of 3GZO nanostructures have also been systematically investigated with respect to the target-substrate (T-S) distance and the growth temperature. The morphology transformations of nanostructures such as nano-horns, NWs, and clusters are strongly affected by growth temperatures due to different thermal energy. Also, the morphologies of nanostructures-including length, diameter, and density-are strongly affected by the T-S distance, illustrating a close correlation between the growth kinetics and the position in the plume formed by the particles from the GZO target. Also, the exciton that is bound to the neutral donor (D 0X) peak of the 3GZO nanostructures is found at the low temperature PL spectra, indicating successful Ga-doping into ZnO NWs.

Original languageEnglish
Pages (from-to)3559-3562
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume12
Issue number4
DOIs
Publication statusPublished - 2012 Jul 6

Fingerprint

Nanowires
Nanostructures
Growth temperature
Pulsed laser deposition
pulsed laser deposition
Lasers
nanowires
Temperature
Substrates
Growth
Weights and Measures
thermal energy
plumes
temperature
Aluminum Oxide
Growth kinetics
sapphire
Horns
Thermal energy
excitons

Keywords

  • Ga-doped
  • Morphology transformation
  • Nanowires
  • ZnO

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

Cite this

Characterizations of Ga-doped ZnO nanowires depending on growth temperature and target-substrate distance in hot-walled pulsed laser deposition. / Kim, Kyoungwon; Park, Dong Hoon; Debnath, Pulak Chandra; Lee, Dong Yun; Kim, Sangsig; Jang, Gun Eik; Lee, Sang Yeol.

In: Journal of Nanoscience and Nanotechnology, Vol. 12, No. 4, 06.07.2012, p. 3559-3562.

Research output: Contribution to journalArticle

Kim, Kyoungwon ; Park, Dong Hoon ; Debnath, Pulak Chandra ; Lee, Dong Yun ; Kim, Sangsig ; Jang, Gun Eik ; Lee, Sang Yeol. / Characterizations of Ga-doped ZnO nanowires depending on growth temperature and target-substrate distance in hot-walled pulsed laser deposition. In: Journal of Nanoscience and Nanotechnology. 2012 ; Vol. 12, No. 4. pp. 3559-3562.
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