TY - GEN
T1 - Characterizing the On-chip Temperature of an Off-the-shelf TSV-based 3D Stacked CPU
AU - Kwon, Ji Hun
AU - Choi, Seung Hun
AU - Chung, Sung Woo
N1 - Funding Information:
ACKNOWLEDGMENT This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2020R1A2C2003500), the Ministry of Science and ICT for Original Technology Program (No. 2020M3F3A2A01082329), and Korea University.
Publisher Copyright:
©2021 IEEE
PY - 2021
Y1 - 2021
N2 - Three-dimensional (3D) integration is adopted in the semiconductor industry to overcome the slowdown of Moore’s Law. The 3D integration is beneficial in terms of interconnection bandwidth, wire delay, power efficiency, and area. However, the on-chip temperature of 3D stacked CPUs is known as much higher than that of conventional 2D CPUs due to the higher power density and lower heat dissipation capability. High on-chip temperature leads to performance degradation of 3D stacked CPUs due to following reasons: 1) High on-chip temperature leads to frequent Dynamic Thermal Management (DTM) invocations, which limits practical CPU voltage and clock frequency. 2) The power limits are used to proactively deal with the thermal problems from high on-chip temperature by adjusting the CPU clock frequency. In this paper, we explore the thermal characteristics of the first off-the-shelf through-silicon-via (TSV) based 3D stacked CPU (Intel Lakefield). In our evaluation, 3D CPU w/ the forced air cooling w/o PL1 shows 21.7% and 6% better single thread performance, on average, compared to 3D CPU w/ PL1 and 3D CPU w/o PL1, respectively. Although the 3D stacked CPU was launched to the market, we identify that the thermal problems of the 3D stacked CPU have not been fully resolved. To tackle the thermal problems of 3D stacked CPUs in the future, researchers are required to consider more innovative integration technologies, optimized DTM techniques, and advanced cooling solutions.
AB - Three-dimensional (3D) integration is adopted in the semiconductor industry to overcome the slowdown of Moore’s Law. The 3D integration is beneficial in terms of interconnection bandwidth, wire delay, power efficiency, and area. However, the on-chip temperature of 3D stacked CPUs is known as much higher than that of conventional 2D CPUs due to the higher power density and lower heat dissipation capability. High on-chip temperature leads to performance degradation of 3D stacked CPUs due to following reasons: 1) High on-chip temperature leads to frequent Dynamic Thermal Management (DTM) invocations, which limits practical CPU voltage and clock frequency. 2) The power limits are used to proactively deal with the thermal problems from high on-chip temperature by adjusting the CPU clock frequency. In this paper, we explore the thermal characteristics of the first off-the-shelf through-silicon-via (TSV) based 3D stacked CPU (Intel Lakefield). In our evaluation, 3D CPU w/ the forced air cooling w/o PL1 shows 21.7% and 6% better single thread performance, on average, compared to 3D CPU w/ PL1 and 3D CPU w/o PL1, respectively. Although the 3D stacked CPU was launched to the market, we identify that the thermal problems of the 3D stacked CPU have not been fully resolved. To tackle the thermal problems of 3D stacked CPUs in the future, researchers are required to consider more innovative integration technologies, optimized DTM techniques, and advanced cooling solutions.
KW - 3D stacked CPU
KW - Dynamic Thermal Management
KW - Thermal characteristics
UR - http://www.scopus.com/inward/record.url?scp=85125344519&partnerID=8YFLogxK
U2 - 10.1109/ITherm51669.2021.9503174
DO - 10.1109/ITherm51669.2021.9503174
M3 - Conference contribution
AN - SCOPUS:85125344519
T3 - InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITHERM
SP - 491
EP - 498
BT - Proceedings of the 20th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2021
PB - IEEE Computer Society
T2 - 20th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2021
Y2 - 1 June 2021 through 4 June 2021
ER -