Charge pumping in Sc2O3/GaN gated MOS diodes

Ji Hyun Kim, R. Mehandru, B. Luo, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, Y. Irokawa

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The charge pumping in Sc2O3/GaN gated metal oxide semiconductor (MOS) diodes was investigated. The Sc2O3/p-GaN gate-controlled n+p diodes were fabricated and the total surface state density was measured. Results showed that the surface charge density was 3×1012 cm-2 at 25 °C.

Original languageEnglish
Pages (from-to)920-921
Number of pages2
JournalElectronics Letters
Volume38
Issue number16
DOIs
Publication statusPublished - 2002 Aug 1
Externally publishedYes

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Semiconductor diodes
Surface states
Surface charge
Charge density
Diodes
Metals
Oxide semiconductors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Kim, J. H., Mehandru, R., Luo, B., Ren, F., Gila, B. P., Onstine, A. H., ... Irokawa, Y. (2002). Charge pumping in Sc2O3/GaN gated MOS diodes. Electronics Letters, 38(16), 920-921. https://doi.org/10.1049/el:20020639

Charge pumping in Sc2O3/GaN gated MOS diodes. / Kim, Ji Hyun; Mehandru, R.; Luo, B.; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Irokawa, Y.

In: Electronics Letters, Vol. 38, No. 16, 01.08.2002, p. 920-921.

Research output: Contribution to journalArticle

Kim, JH, Mehandru, R, Luo, B, Ren, F, Gila, BP, Onstine, AH, Abernathy, CR, Pearton, SJ & Irokawa, Y 2002, 'Charge pumping in Sc2O3/GaN gated MOS diodes', Electronics Letters, vol. 38, no. 16, pp. 920-921. https://doi.org/10.1049/el:20020639
Kim JH, Mehandru R, Luo B, Ren F, Gila BP, Onstine AH et al. Charge pumping in Sc2O3/GaN gated MOS diodes. Electronics Letters. 2002 Aug 1;38(16):920-921. https://doi.org/10.1049/el:20020639
Kim, Ji Hyun ; Mehandru, R. ; Luo, B. ; Ren, F. ; Gila, B. P. ; Onstine, A. H. ; Abernathy, C. R. ; Pearton, S. J. ; Irokawa, Y. / Charge pumping in Sc2O3/GaN gated MOS diodes. In: Electronics Letters. 2002 ; Vol. 38, No. 16. pp. 920-921.
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