Charge pumping in Sc2O3/GaN gated MOS diodes

Ji Hyun Kim, R. Mehandru, B. Luo, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, Y. Irokawa

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The charge pumping in Sc2O3/GaN gated metal oxide semiconductor (MOS) diodes was investigated. The Sc2O3/p-GaN gate-controlled n+p diodes were fabricated and the total surface state density was measured. Results showed that the surface charge density was 3×1012 cm-2 at 25 °C.

Original languageEnglish
Pages (from-to)920-921
Number of pages2
JournalElectronics Letters
Volume38
Issue number16
DOIs
Publication statusPublished - 2002 Aug 1
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Charge pumping in Sc<sub>2</sub>O<sub>3</sub>/GaN gated MOS diodes'. Together they form a unique fingerprint.

  • Cite this

    Kim, J. H., Mehandru, R., Luo, B., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., & Irokawa, Y. (2002). Charge pumping in Sc2O3/GaN gated MOS diodes. Electronics Letters, 38(16), 920-921. https://doi.org/10.1049/el:20020639