Charge pumping in Sc2O3/GaN gated MOS diodes

J. Kim, R. Mehandru, B. Luo, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, Y. Irokawa

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

The charge pumping in Sc2O3/GaN gated metal oxide semiconductor (MOS) diodes was investigated. The Sc2O3/p-GaN gate-controlled n+p diodes were fabricated and the total surface state density was measured. Results showed that the surface charge density was 3×1012 cm-2 at 25 °C.

Original languageEnglish
Pages (from-to)920-921
Number of pages2
JournalElectronics Letters
Volume38
Issue number16
DOIs
Publication statusPublished - 2002 Aug 1
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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