The charge pumping in Sc2O3/GaN gated metal oxide semiconductor (MOS) diodes was investigated. The Sc2O3/p-GaN gate-controlled n+p diodes were fabricated and the total surface state density was measured. Results showed that the surface charge density was 3×1012 cm-2 at 25 °C.
ASJC Scopus subject areas
- Electrical and Electronic Engineering