Charge-Recycling based Redundant Write Prevention Technique for Low Power SOT-MRAM

Gyuseong Kang, Yunho Jang, Jongsun Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

While the spin transfer torque magnetic memory (STT-MRAM) suffers from its shortcomings such as high write power, slow write operation and reliability issues, spin orbit torque magnetic random access memory (SOT-MRAM) can offer relatively faster write operation with low power based on giant spin hall effect. Although SOT-MRAM provides low power write operation, to meet the power level of current embedded memories, significant reduction of write power is highly required. In this paper, we present a low power write technique for SOT-MRAM. In order to prevent redundant write operation, read-compare-write operation is adopted. As a result, only the SOT cells having different data are written, and write power is saved in the cells with the same data. For further optimization, bitline switching scheme is used to reduce bitline and source line swing in write operation. The negative bitline scheme is also exploited by re-cycling the charge from read operation to increase write current. Simulation results using 65nm CMOS technology show that up to 40.1 % of write energy can be saved compared to the conventional unnecessary write avoidance approach.

Original languageEnglish
Title of host publication2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Volume2018-May
ISBN (Electronic)9781538648810
DOIs
Publication statusPublished - 2018 Apr 26
Event2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Florence, Italy
Duration: 2018 May 272018 May 30

Other

Other2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018
CountryItaly
CityFlorence
Period18/5/2718/5/30

Keywords

  • SOT-MRAM
  • spin-orbit torque (SOT)
  • write power reduction

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Kang, G., Jang, Y., & Park, J. (2018). Charge-Recycling based Redundant Write Prevention Technique for Low Power SOT-MRAM. In 2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Proceedings (Vol. 2018-May). [8351277] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCAS.2018.8351277