Abstract
The modification of the electrical characteristics of field-effect transistors (FETs) with channels composed of n- or p-type silicon nanowires (SiNWs) by oxygen plasma treatment is investigated in this study. The SiNWs obtained from silicon bulk wafers are <111> surface-oriented and their doping concentrations are ∼1021 and ∼1017 cm-3 for the n- and p-type SiNWs, respectively. After the back-gate SiNWFETs were subjected to oxygen plasma treatment, the magnitude of the drain current of the n-type SiNWs was decreased, whereas that of the p-type SiNWs was increased, while the gate-dependent characteristics of both of types of SiNWs were improved. The changes in the electrical characteristics are due to the adsorption of oxygen ions on the surface of the SiNWs. To verify the effect of the oxygen ions, the SiNWFETs were kept in a vacuum for 24 h whereupon their electrical characteristics tended to revert to their inherent state.
| Original language | English |
|---|---|
| Pages (from-to) | 1870-1874 |
| Number of pages | 5 |
| Journal | Solid State Sciences |
| Volume | 11 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2009 Nov 1 |
Fingerprint
Keywords
- Electronic transport
- Nanowire
- Semiconductors
- Silicon
ASJC Scopus subject areas
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
Cite this
Charge transport modulation of silicon nanowire by O2 plasma. / Koo, Jamin; Kim, Sangsig.
In: Solid State Sciences, Vol. 11, No. 11, 01.11.2009, p. 1870-1874.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Charge transport modulation of silicon nanowire by O2 plasma
AU - Koo, Jamin
AU - Kim, Sangsig
PY - 2009/11/1
Y1 - 2009/11/1
N2 - The modification of the electrical characteristics of field-effect transistors (FETs) with channels composed of n- or p-type silicon nanowires (SiNWs) by oxygen plasma treatment is investigated in this study. The SiNWs obtained from silicon bulk wafers are <111> surface-oriented and their doping concentrations are ∼1021 and ∼1017 cm-3 for the n- and p-type SiNWs, respectively. After the back-gate SiNWFETs were subjected to oxygen plasma treatment, the magnitude of the drain current of the n-type SiNWs was decreased, whereas that of the p-type SiNWs was increased, while the gate-dependent characteristics of both of types of SiNWs were improved. The changes in the electrical characteristics are due to the adsorption of oxygen ions on the surface of the SiNWs. To verify the effect of the oxygen ions, the SiNWFETs were kept in a vacuum for 24 h whereupon their electrical characteristics tended to revert to their inherent state.
AB - The modification of the electrical characteristics of field-effect transistors (FETs) with channels composed of n- or p-type silicon nanowires (SiNWs) by oxygen plasma treatment is investigated in this study. The SiNWs obtained from silicon bulk wafers are <111> surface-oriented and their doping concentrations are ∼1021 and ∼1017 cm-3 for the n- and p-type SiNWs, respectively. After the back-gate SiNWFETs were subjected to oxygen plasma treatment, the magnitude of the drain current of the n-type SiNWs was decreased, whereas that of the p-type SiNWs was increased, while the gate-dependent characteristics of both of types of SiNWs were improved. The changes in the electrical characteristics are due to the adsorption of oxygen ions on the surface of the SiNWs. To verify the effect of the oxygen ions, the SiNWFETs were kept in a vacuum for 24 h whereupon their electrical characteristics tended to revert to their inherent state.
KW - Electronic transport
KW - Nanowire
KW - Semiconductors
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=70350571909&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=70350571909&partnerID=8YFLogxK
U2 - 10.1016/j.solidstatesciences.2009.08.004
DO - 10.1016/j.solidstatesciences.2009.08.004
M3 - Article
VL - 11
SP - 1870
EP - 1874
JO - Solid State Sciences
JF - Solid State Sciences
SN - 1293-2558
IS - 11
ER -