Charge transport modulation of silicon nanowire by O2 plasma

Jamin Koo, Sangsig Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The modification of the electrical characteristics of field-effect transistors (FETs) with channels composed of n- or p-type silicon nanowires (SiNWs) by oxygen plasma treatment is investigated in this study. The SiNWs obtained from silicon bulk wafers are <111> surface-oriented and their doping concentrations are ∼1021 and ∼1017 cm-3 for the n- and p-type SiNWs, respectively. After the back-gate SiNWFETs were subjected to oxygen plasma treatment, the magnitude of the drain current of the n-type SiNWs was decreased, whereas that of the p-type SiNWs was increased, while the gate-dependent characteristics of both of types of SiNWs were improved. The changes in the electrical characteristics are due to the adsorption of oxygen ions on the surface of the SiNWs. To verify the effect of the oxygen ions, the SiNWFETs were kept in a vacuum for 24 h whereupon their electrical characteristics tended to revert to their inherent state.

Original languageEnglish
Pages (from-to)1870-1874
Number of pages5
JournalSolid State Sciences
Volume11
Issue number11
DOIs
Publication statusPublished - 2009 Nov 1

Fingerprint

Silicon
Nanowires
Charge transfer
nanowires
Modulation
Plasmas
modulation
silicon
Oxygen
oxygen plasma
oxygen ions
Ions
Drain current
Field effect transistors
field effect transistors
Doping (additives)
wafers
Vacuum
Adsorption
vacuum

Keywords

  • Electronic transport
  • Nanowire
  • Semiconductors
  • Silicon

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Charge transport modulation of silicon nanowire by O2 plasma. / Koo, Jamin; Kim, Sangsig.

In: Solid State Sciences, Vol. 11, No. 11, 01.11.2009, p. 1870-1874.

Research output: Contribution to journalArticle

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