Charge transport properties of CdMnTe radiation detectors

R. Rafiei, D. Boardman, M. I. Reinhard, A. Sarbutt, Kihyun Kim, G. C. Watt, S. Uxa, D. A. Prokopovich, E. Belas, A. E. Bolotnikov, R. B. James

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Abstract

Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe) radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomo-geneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading charge collection is reduced with increasing values of bias voltage. The electron drift velocity was calculated from the rise time distribution of the preamplifier output pulses at each measured bias. From the dependence of drift velocity on applied electric field the electron mobility was found to be μn = (718 ± 55) cm2/Vs at room temperature.

Original languageEnglish
Article number02005
JournalEPJ Web of Conferences
Volume35
DOIs
Publication statusPublished - 2012 Dec 1
Externally publishedYes
Event1st Heavy Ion Accelerator Symposium on Fundamental and Applied Science, HIAS 2012 - Canberra, ACT, Australia
Duration: 2012 Apr 112012 Apr 13

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Rafiei, R., Boardman, D., Reinhard, M. I., Sarbutt, A., Kim, K., Watt, G. C., Uxa, S., Prokopovich, D. A., Belas, E., Bolotnikov, A. E., & James, R. B. (2012). Charge transport properties of CdMnTe radiation detectors. EPJ Web of Conferences, 35, [02005]. https://doi.org/10.1051/epjconf/20123502005