Charge trap flash memory using ferroelectric materials as a blocking layer

Yujeong Seo, Ho Myoung An, Min Yeong Song, Tae Geun Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this paper, we propose a charge-trap flash memory device using a ferroelectric material, Sr 0.7Bi 2.3Nb 2O 9 (SBN), with spontaneous polarization as a blocking layer. This device consists of metal/SBN/nitride/oxide/silicon and has an advantage in the carrier injection into the nitride from the silicon due to polarization charges formed in the ferroelectric material. Compared to conventional metal/oxide/nitride/oxide/silicon memory devices, the proposed devices showed a larger memory window (7 V), faster program/erase (P/E) speeds (100/500 μs), and higher endurance (10 5P/E cycles) with comparable retention properties.

Original languageEnglish
Article number173507
JournalApplied Physics Letters
Volume100
Issue number17
DOIs
Publication statusPublished - 2012 Apr 23

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ferroelectric materials
flash
traps
nitrides
metal-nitride-oxide-silicon
endurance
carrier injection
polarization
silicon oxides
metal oxides
cycles
silicon

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Charge trap flash memory using ferroelectric materials as a blocking layer. / Seo, Yujeong; An, Ho Myoung; Yeong Song, Min; Kim, Tae Geun.

In: Applied Physics Letters, Vol. 100, No. 17, 173507, 23.04.2012.

Research output: Contribution to journalArticle

Seo, Yujeong ; An, Ho Myoung ; Yeong Song, Min ; Kim, Tae Geun. / Charge trap flash memory using ferroelectric materials as a blocking layer. In: Applied Physics Letters. 2012 ; Vol. 100, No. 17.
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