In this paper, we propose a charge-trap flash memory device using a ferroelectric material, Sr 0.7Bi 2.3Nb 2O 9 (SBN), with spontaneous polarization as a blocking layer. This device consists of metal/SBN/nitride/oxide/silicon and has an advantage in the carrier injection into the nitride from the silicon due to polarization charges formed in the ferroelectric material. Compared to conventional metal/oxide/nitride/oxide/silicon memory devices, the proposed devices showed a larger memory window (7 V), faster program/erase (P/E) speeds (100/500 μs), and higher endurance (10 5P/E cycles) with comparable retention properties.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)