Charge trap flash memory using ferroelectric materials as a blocking layer

Yujeong Seo; Ho Myoung An; Min Yeong Song; Tae Geun Kim

doi:10.1063/1.4705411

Charge trap flash memory using ferroelectric materials as a blocking layer

Yujeong Seo, Ho Myoung An, Min Yeong Song, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

In this paper, we propose a charge-trap flash memory device using a ferroelectric material, Sr _0.7Bi _2.3Nb ₂O ₉ (SBN), with spontaneous polarization as a blocking layer. This device consists of metal/SBN/nitride/oxide/silicon and has an advantage in the carrier injection into the nitride from the silicon due to polarization charges formed in the ferroelectric material. Compared to conventional metal/oxide/nitride/oxide/silicon memory devices, the proposed devices showed a larger memory window (7 V), faster program/erase (P/E) speeds (100/500 μs), and higher endurance (10 ⁵P/E cycles) with comparable retention properties.

Original language	English
Article number	173507
Journal	Applied Physics Letters
Volume	100
Issue number	17
DOIs	https://doi.org/10.1063/1.4705411
Publication status	Published - 2012 Apr 23

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4705411

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title = "Charge trap flash memory using ferroelectric materials as a blocking layer",

abstract = "In this paper, we propose a charge-trap flash memory device using a ferroelectric material, Sr 0.7Bi 2.3Nb 2O 9 (SBN), with spontaneous polarization as a blocking layer. This device consists of metal/SBN/nitride/oxide/silicon and has an advantage in the carrier injection into the nitride from the silicon due to polarization charges formed in the ferroelectric material. Compared to conventional metal/oxide/nitride/oxide/silicon memory devices, the proposed devices showed a larger memory window (7 V), faster program/erase (P/E) speeds (100/500 μs), and higher endurance (10 5P/E cycles) with comparable retention properties.",

author = "Yujeong Seo and An, {Ho Myoung} and {Yeong Song}, Min and {Geun Kim}, Tae",

note = "Funding Information: This work was supported by the Seoul R&BD program (ST100024) and Leading Foreign Research Institute Recruitment Program through the National Research Foundation of Korea(NRF) funded by the Ministry of Education, Science, and Technology (MEST) (No.2011-00125).",

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doi = "10.1063/1.4705411",

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T1 - Charge trap flash memory using ferroelectric materials as a blocking layer

AU - Seo, Yujeong

AU - An, Ho Myoung

AU - Yeong Song, Min

AU - Geun Kim, Tae

N1 - Funding Information: This work was supported by the Seoul R&BD program (ST100024) and Leading Foreign Research Institute Recruitment Program through the National Research Foundation of Korea(NRF) funded by the Ministry of Education, Science, and Technology (MEST) (No.2011-00125).

PY - 2012/4/23

Y1 - 2012/4/23

N2 - In this paper, we propose a charge-trap flash memory device using a ferroelectric material, Sr 0.7Bi 2.3Nb 2O 9 (SBN), with spontaneous polarization as a blocking layer. This device consists of metal/SBN/nitride/oxide/silicon and has an advantage in the carrier injection into the nitride from the silicon due to polarization charges formed in the ferroelectric material. Compared to conventional metal/oxide/nitride/oxide/silicon memory devices, the proposed devices showed a larger memory window (7 V), faster program/erase (P/E) speeds (100/500 μs), and higher endurance (10 5P/E cycles) with comparable retention properties.

AB - In this paper, we propose a charge-trap flash memory device using a ferroelectric material, Sr 0.7Bi 2.3Nb 2O 9 (SBN), with spontaneous polarization as a blocking layer. This device consists of metal/SBN/nitride/oxide/silicon and has an advantage in the carrier injection into the nitride from the silicon due to polarization charges formed in the ferroelectric material. Compared to conventional metal/oxide/nitride/oxide/silicon memory devices, the proposed devices showed a larger memory window (7 V), faster program/erase (P/E) speeds (100/500 μs), and higher endurance (10 5P/E cycles) with comparable retention properties.

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Charge trap flash memory using ferroelectric materials as a blocking layer

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