Charge-trap flash memory using zirconium-nitride-based memristor switches

Hee Dong Kim; Kyeong Heon Kim; Ho Myoung An; Tae Geun Kim

doi:10.1088/0022-3727/48/44/445102

Charge-trap flash memory using zirconium-nitride-based memristor switches

Hee Dong Kim, Kyeong Heon Kim, Ho Myoung An, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Charge-trap flash (CTF) memory using a zirconium nitride (ZrN)-based memristor switch (MRS) is demonstrated for next-generation nonvolatile memory. This device consists of a metal/MRS/nitride/oxide/silicon (M/MRS/N/O/S) structure so that electrical transport via the ZrN-based MRS layer can be utilized. Compared to previous oxide materials used as conduction paths, the proposed CTF device with a ZrN-based MRS exhibits a faster program/erase switching speed (20 ns/7 ns), along with comparable endurance and retention properties.

Original language	English
Article number	445102
Journal	Journal of Physics D: Applied Physics
Volume	48
Issue number	44
DOIs	https://doi.org/10.1088/0022-3727/48/44/445102
Publication status	Published - 2015 Oct 8

Keywords

ReCTF
ZrN
blocking layer
filament
memristor switch

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/0022-3727/48/44/445102

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title = "Charge-trap flash memory using zirconium-nitride-based memristor switches",

abstract = "Charge-trap flash (CTF) memory using a zirconium nitride (ZrN)-based memristor switch (MRS) is demonstrated for next-generation nonvolatile memory. This device consists of a metal/MRS/nitride/oxide/silicon (M/MRS/N/O/S) structure so that electrical transport via the ZrN-based MRS layer can be utilized. Compared to previous oxide materials used as conduction paths, the proposed CTF device with a ZrN-based MRS exhibits a faster program/erase switching speed (20 ns/7 ns), along with comparable endurance and retention properties.",

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AU - Kim, Hee Dong

AU - Kim, Kyeong Heon

AU - An, Ho Myoung

AU - Kim, Tae Geun

N1 - Publisher Copyright: ï¿½ 2015 IOP Publishing Ltd.

PY - 2015/10/8

Y1 - 2015/10/8

N2 - Charge-trap flash (CTF) memory using a zirconium nitride (ZrN)-based memristor switch (MRS) is demonstrated for next-generation nonvolatile memory. This device consists of a metal/MRS/nitride/oxide/silicon (M/MRS/N/O/S) structure so that electrical transport via the ZrN-based MRS layer can be utilized. Compared to previous oxide materials used as conduction paths, the proposed CTF device with a ZrN-based MRS exhibits a faster program/erase switching speed (20 ns/7 ns), along with comparable endurance and retention properties.

AB - Charge-trap flash (CTF) memory using a zirconium nitride (ZrN)-based memristor switch (MRS) is demonstrated for next-generation nonvolatile memory. This device consists of a metal/MRS/nitride/oxide/silicon (M/MRS/N/O/S) structure so that electrical transport via the ZrN-based MRS layer can be utilized. Compared to previous oxide materials used as conduction paths, the proposed CTF device with a ZrN-based MRS exhibits a faster program/erase switching speed (20 ns/7 ns), along with comparable endurance and retention properties.

KW - ReCTF

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KW - blocking layer

KW - filament

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Charge-trap flash memory using zirconium-nitride-based memristor switches

Abstract

Keywords

ASJC Scopus subject areas

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