Charge-trap flash memory using zirconium-nitride-based memristor switches

Hee Dong Kim; Kyeong Heon Kim; Ho Myoung An; Tae Geun Kim

doi:10.1088/0022-3727/48/44/445102

Charge-trap flash memory using zirconium-nitride-based memristor switches

Hee Dong Kim, Kyeong Heon Kim, Ho Myoung An, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Charge-trap flash (CTF) memory using a zirconium nitride (ZrN)-based memristor switch (MRS) is demonstrated for next-generation nonvolatile memory. This device consists of a metal/MRS/nitride/oxide/silicon (M/MRS/N/O/S) structure so that electrical transport via the ZrN-based MRS layer can be utilized. Compared to previous oxide materials used as conduction paths, the proposed CTF device with a ZrN-based MRS exhibits a faster program/erase switching speed (20 ns/7 ns), along with comparable endurance and retention properties.

Original language	English
Article number	445102
Journal	Journal of Physics D: Applied Physics
Volume	48
Issue number	44
DOIs	https://doi.org/10.1088/0022-3727/48/44/445102
Publication status	Published - 2015 Oct 8

Keywords

ReCTF
ZrN
blocking layer
filament
memristor switch

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

Access to Document

10.1088/0022-3727/48/44/445102

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Cite this

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AB - Charge-trap flash (CTF) memory using a zirconium nitride (ZrN)-based memristor switch (MRS) is demonstrated for next-generation nonvolatile memory. This device consists of a metal/MRS/nitride/oxide/silicon (M/MRS/N/O/S) structure so that electrical transport via the ZrN-based MRS layer can be utilized. Compared to previous oxide materials used as conduction paths, the proposed CTF device with a ZrN-based MRS exhibits a faster program/erase switching speed (20 ns/7 ns), along with comparable endurance and retention properties.

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