Charge-trap flash memory using zirconium-nitride-based memristor switches

Hee Dong Kim, Kyeong Heon Kim, Ho Myoung An, Tae Geun Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Charge-trap flash (CTF) memory using a zirconium nitride (ZrN)-based memristor switch (MRS) is demonstrated for next-generation nonvolatile memory. This device consists of a metal/MRS/nitride/oxide/silicon (M/MRS/N/O/S) structure so that electrical transport via the ZrN-based MRS layer can be utilized. Compared to previous oxide materials used as conduction paths, the proposed CTF device with a ZrN-based MRS exhibits a faster program/erase switching speed (20 ns/7 ns), along with comparable endurance and retention properties.

Original languageEnglish
Article number445102
JournalJournal of Physics D: Applied Physics
Volume48
Issue number44
DOIs
Publication statusPublished - 2015 Oct 8

Keywords

  • blocking layer
  • filament
  • memristor switch
  • ReCTF
  • ZrN

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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