Abstract
Charge-trap flash (CTF) memory using a zirconium nitride (ZrN)-based memristor switch (MRS) is demonstrated for next-generation nonvolatile memory. This device consists of a metal/MRS/nitride/oxide/silicon (M/MRS/N/O/S) structure so that electrical transport via the ZrN-based MRS layer can be utilized. Compared to previous oxide materials used as conduction paths, the proposed CTF device with a ZrN-based MRS exhibits a faster program/erase switching speed (20 ns/7 ns), along with comparable endurance and retention properties.
| Original language | English |
|---|---|
| Article number | 445102 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 48 |
| Issue number | 44 |
| DOIs | |
| Publication status | Published - 2015 Oct 8 |
Keywords
- blocking layer
- filament
- memristor switch
- ReCTF
- ZrN
ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films
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Kim, H. D., Kim, K. H., An, H. M., & Kim, T. G. (2015). Charge-trap flash memory using zirconium-nitride-based memristor switches. Journal of Physics D: Applied Physics, 48(44), [445102]. https://doi.org/10.1088/0022-3727/48/44/445102