Chemical beam epitaxy of GaAsN thin films with monomethylhydrazine as N source

Kenichi Nishimura, Hae Seok Lee, Hidetoshi Suzuki, Yoshio Ohshita, Masafumi Yamaguchi

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

GaAsN thin films were grown by chemical beam epitaxy (CBE) with monomethylhydrazine (MMHy) as a N source. Processes that determine the N composition in the GaAsN thin films were investigated in the growth temperature range from 340 to 480°C. When growth temperature is low (340-390°C), N composition is mainly determined by the supply of N species generated from MMHy and growth rate, since the desorption rate of N species from the growing surface is low. The effect of the desorption of N species on N composition is enhanced by increasing growth temperature (390-445°C). When growth temperature is high (445-480°C), the degree of N atom segregation from the grown layer increases, resulting in a marked decrease in N composition. Thus, N composition is determined by the balance of supply and desorption of N species, and growth rate.

Original languageEnglish
Pages (from-to)2844-2847
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number5 A
DOIs
Publication statusPublished - 2007 May 8

Keywords

  • Chemical beam epitaxy
  • GaAs
  • GaAsN
  • Monomethylhydrazine
  • N composition

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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