Chemical beam epitaxy of InGaAsN films for multi-junction tandem solar cells

Haeseok Lee, K. Nishimura, Y. Yagi, M. Tachibana, N. J. Ekins-Daukes, Y. Ohshita, N. Kojima, M. Yamaguchi

Research output: Contribution to journalConference article

44 Citations (Scopus)

Abstract

Chemical beam epitaxy (CBE) offers a new growth technique for InGaAsN films that are expected to provide the third cell in an ultra-efficiency 4-junction tandem III-V solar cell. In the CBE system, the selection of arsenic (As) and nitrogen (N) sources is important, so the decomposition processes of As (TBAs, TDMAAs) and N (DMHy, MMHy) precursors were investigated with substrate temperature. Both tertiarybutylarsine (TBAs) and trisdimethylaminoarsenic (TDMAAs) were decomposed at a low temperature (<300 °C). While methyl alkyl and tertiarybutyl radical were produced by decomposition of TBAs, Dimethylamine and Aziridine were produced during the decomposition of TDMAAs. The residual carbon concentration in GaAs films grown with TDMAAs was less than 1016 cm-3. The incorporation of N in GaAsN films grown with DMHy and MMHy decreased with increasing substrate temperature, and the incorporation of N in GaAsN films grown with MMHy was higher.

Original languageEnglish
JournalJournal of Crystal Growth
Volume275
Issue number1-2
DOIs
Publication statusPublished - 2005 Feb 15
Externally publishedYes

Fingerprint

Chemical beam epitaxy
epitaxy
Solar cells
solar cells
Arsenic
Decomposition
decomposition
arsenic
Substrates
Temperature
Nitrogen
Carbon
nitrogen
temperature
carbon
cells

Keywords

  • A1. X-ray diffraction
  • A3. Chemical beam epitaxy
  • B1. Nitrides
  • B3. Solar cells

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Lee, H., Nishimura, K., Yagi, Y., Tachibana, M., Ekins-Daukes, N. J., Ohshita, Y., ... Yamaguchi, M. (2005). Chemical beam epitaxy of InGaAsN films for multi-junction tandem solar cells. Journal of Crystal Growth, 275(1-2). https://doi.org/10.1016/j.jcrysgro.2004.11.200

Chemical beam epitaxy of InGaAsN films for multi-junction tandem solar cells. / Lee, Haeseok; Nishimura, K.; Yagi, Y.; Tachibana, M.; Ekins-Daukes, N. J.; Ohshita, Y.; Kojima, N.; Yamaguchi, M.

In: Journal of Crystal Growth, Vol. 275, No. 1-2, 15.02.2005.

Research output: Contribution to journalConference article

Lee, H, Nishimura, K, Yagi, Y, Tachibana, M, Ekins-Daukes, NJ, Ohshita, Y, Kojima, N & Yamaguchi, M 2005, 'Chemical beam epitaxy of InGaAsN films for multi-junction tandem solar cells', Journal of Crystal Growth, vol. 275, no. 1-2. https://doi.org/10.1016/j.jcrysgro.2004.11.200
Lee, Haeseok ; Nishimura, K. ; Yagi, Y. ; Tachibana, M. ; Ekins-Daukes, N. J. ; Ohshita, Y. ; Kojima, N. ; Yamaguchi, M. / Chemical beam epitaxy of InGaAsN films for multi-junction tandem solar cells. In: Journal of Crystal Growth. 2005 ; Vol. 275, No. 1-2.
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