Chemical doping effects of gas molecules on black phosphorus field-effect transistors

Suhyun Kim, Geonyeop Lee, Jihyun Kim

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Black phosphorus (BP) is a recently rediscovered layered material with outstanding optical and electrical properties. Its large adsorption energy and high surface-to-volume ratio have motivated chemical sensing and doping applications. We analyzed the charge transport properties as BP-based field-effect transistors (FETs) were chemically doped by adsorption of gas molecules. The electron-withdrawing NO2 and the electron-donating NH3 molecules were applied to observe p-doping and n-doping behaviors, respectively, in BP channel layer. Y-function method was used to extract the device parameters, allowing us to elucidate the chemical doping effects of different types of gas molecules in BP FETs. Excellent sensing ability of BP-based devices to gas molecules was also demonstrated. Our results provide a facile method to control the device properties of BP-based FET via the chemical doping.

Original languageEnglish
Pages (from-to)Q3065-Q3069
JournalECS Journal of Solid State Science and Technology
Volume7
Issue number7
DOIs
Publication statusPublished - 2018

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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