Chemical etch characteristics of N-Face and Ga-Face GaN by phosphoric acid and potassium hydroxide solutions

Younghun Jung, Jaehui Ahn, Kwang Hyeon Baik, Donghwan Kim, Stephen J. Pearton, Fan Ren, Ji Hyun Kim

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

We report the chemical etching characteristics of Ga-face and N-face GaN using phosphoric acid (H 3PO 4) or potassium hydroxide (KOH) solutions. Hexagonal pyramids, which consisted of the {10-1-1} planes, were present on the N-face after KOH (2M, 100C) etching. By contrast, using the H 3PO 4 (85 wt., 100C) solutions, the nitrogen surface of GaN showed dodecagonal pyramids. Dodecagonal and hexagonal pyramids repeatedly appear on the etched surface when using the H 3PO 4 or KOH solutions, respectively. A low concentration of H 3PO 4 (H 3PO 4: deionized water = 1:32, 1:64) produced a roughened surface with coexistence of dodecagonal and hexagonal pyramids. The photoluminescence (PL) intensity of the etched surfaces significantly increased due to multiple scattering events compared to the non-etched surface. Thus, the etching techniques developed in this study were shown to improve the light extraction efficiency of light emitting diodes (LEDs), avoiding the damage to the GaN typically created by plasma etching methods.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume159
Issue number2
DOIs
Publication statusPublished - 2012 Jan 6

Fingerprint

potassium hydroxides
Potassium hydroxide
phosphoric acid
Phosphoric acid
hydroxides
pyramids
Etching
etching
Plasma etching
Deionized water
Multiple scattering
plasma etching
Light emitting diodes
low concentrations
Photoluminescence
Nitrogen
light emitting diodes
potassium hydroxide
damage
photoluminescence

ASJC Scopus subject areas

  • Electrochemistry
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics

Cite this

Chemical etch characteristics of N-Face and Ga-Face GaN by phosphoric acid and potassium hydroxide solutions. / Jung, Younghun; Ahn, Jaehui; Baik, Kwang Hyeon; Kim, Donghwan; Pearton, Stephen J.; Ren, Fan; Kim, Ji Hyun.

In: Journal of the Electrochemical Society, Vol. 159, No. 2, 06.01.2012.

Research output: Contribution to journalArticle

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AU - Pearton, Stephen J.

AU - Ren, Fan

AU - Kim, Ji Hyun

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