Chemical etching behavior of non-polar GaN sidewalls

Younghun Jung, Soohwan Jang, Kwang Hyeon Baik, Hong Yeol Kim, Jihyun Kim

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Wet-chemical etching of non-polar GaN films can be applied to form textured surfaces that enhance light extraction efficiency in light-emitting diodes. The etch-induced shapes (trigonal prisms) on the sidewalls of concave and convex mesa patterns defined on a-plane GaN films exhibited an alignment towards the [0001̅] direction. An etch-rate vector model that includes one fast etching direction and two etching directions normal to the fast direction was developed to explain the creation of the etch-induced trigonal prisms. The large lattice parameter along with [0001̅] and single dangling bond of a-plane surface supply enough space for attack of OH ions, which is confirmed by XPS analysis that indicates the increased hydroxide spectra on a-plane after KOH etching and these are the reason for different etch rate and formation of trigonal prisms.

Original languageEnglish
Pages (from-to)108-112
Number of pages5
JournalJournal of Crystal Growth
Publication statusPublished - 2016 Dec 15


  • A1. Etching
  • A1. Non-polar
  • B2. Gallium nitride
  • B2. Semiconducting III–V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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