Chemical lift-off of (1122) semipolar GaN using periodic triangular cavities

Dae Woo Jeon, Seung Jae Lee, Tak Jeong, Jong Hyeob Baek, Jae Woo Park, Lee Woon Jang, Myoung Kim, In Hwan Lee, Jin Woo Ju

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Chemical lift-off of (1122) semipolar GaN using triangular cavities was investigated. The (1122) semipolar GaN was grown using epitaxial lateral overgrowth by metal-organic chemical vapor deposition on m-plane sapphire, in such a way as to keep N terminated surface of c-plane GaN exposed in the cavities. After regrowing 300 μm thick (1122) semipolar GaN by hydride vapor phase epitaxy for a free-standing (1122) semipolar GaN substrate, the triangular cavities of the templates were chemically etched in molten KOH. The (000-2) plane in the triangular cavities can be etched in the [0002] direction with the high lateral etching rate of 196 μm/min. The resulting free-standing (1122) semipolar GaN substrate was confirmed to be strain-free by the Raman analysis.

Original languageEnglish
Pages (from-to)134-138
Number of pages5
JournalJournal of Crystal Growth
Volume338
Issue number1
DOIs
Publication statusPublished - 2012 Jan 1
Externally publishedYes

Keywords

  • A1. Chemical etching
  • A3. Metalorganic chemical vapor deposition
  • B1. Semipolar GaN
  • B2. GaN substrate

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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  • Cite this

    Jeon, D. W., Lee, S. J., Jeong, T., Baek, J. H., Park, J. W., Jang, L. W., Kim, M., Lee, I. H., & Ju, J. W. (2012). Chemical lift-off of (1122) semipolar GaN using periodic triangular cavities. Journal of Crystal Growth, 338(1), 134-138. https://doi.org/10.1016/j.jcrysgro.2011.11.014