TY - JOUR
T1 - Chemical vapor deposition of cobalt using novel cobalt(I) precursors
AU - Choi, Hyungsoo
AU - Park, Sungho
AU - Jang, Ho G.
N1 - Funding Information:
This work was supported by the National Science Foundation under Grant No. CHE-9973575. S. Park was supported by the Office of Naval Research and CRM-KOSEF (2001). We thank the Center for Microanalysis of Materials of Frederick Seitz Materials Research Laboratory at University of Illinois at Urbana-Champaign for the use of SEM and XPS.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2002/2
Y1 - 2002/2
N2 - The deposition of cobalt thin films from cobalt hydride complexes, HCo[P(OR)3]4, where R = methyl, ethyl, i-propyl, and n-butyl, by a chemical vapor deposition method is reported. The new cobalt precursors deposited high-purity cobalt films at substrate temperatures as low as 300 °C without employing hydrogen. The deposited Co films showed smooth and dense surface morphology. The microstructure and growth rate of the deposited films depended on the reaction conditions such as substrate temperature and precursor feed. No gas phase reactions were observed during the deposition process.
AB - The deposition of cobalt thin films from cobalt hydride complexes, HCo[P(OR)3]4, where R = methyl, ethyl, i-propyl, and n-butyl, by a chemical vapor deposition method is reported. The new cobalt precursors deposited high-purity cobalt films at substrate temperatures as low as 300 °C without employing hydrogen. The deposited Co films showed smooth and dense surface morphology. The microstructure and growth rate of the deposited films depended on the reaction conditions such as substrate temperature and precursor feed. No gas phase reactions were observed during the deposition process.
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U2 - 10.1557/JMR.2002.0037
DO - 10.1557/JMR.2002.0037
M3 - Article
AN - SCOPUS:0036477603
VL - 17
SP - 267
EP - 270
JO - Journal of Materials Research
JF - Journal of Materials Research
SN - 0884-2914
IS - 2
ER -