Chemical vapor deposition of cobalt using novel cobalt(I) precursors

Hyungsoo Choi, Sungho Park, Ho Gyeom Jang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The deposition of cobalt thin films from cobalt hydride complexes, HCo[P(OR) 3] 4, where R = methyl, ethyl, i-propyl, and n-butyl, by a chemical vapor deposition method is reported. The new cobalt precursors deposited high-purity cobalt films at substrate temperatures as low as 300 °C without employing hydrogen. The deposited Co films showed smooth and dense surface morphology. The microstructure and growth rate of the deposited films depended on the reaction conditions such as substrate temperature and precursor feed. No gas phase reactions were observed during the deposition process.

Original languageEnglish
Pages (from-to)267-270
Number of pages4
JournalJournal of Materials Research
Volume17
Issue number2
Publication statusPublished - 2002 Feb 1

Fingerprint

Cobalt
Chemical vapor deposition
cobalt
vapor deposition
Substrates
Hydrides
hydrides
Surface morphology
Hydrogen
purity
Gases
vapor phases
Thin films
Temperature
microstructure
Microstructure
temperature
hydrogen
thin films

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Chemical vapor deposition of cobalt using novel cobalt(I) precursors. / Choi, Hyungsoo; Park, Sungho; Jang, Ho Gyeom.

In: Journal of Materials Research, Vol. 17, No. 2, 01.02.2002, p. 267-270.

Research output: Contribution to journalArticle

Choi, Hyungsoo ; Park, Sungho ; Jang, Ho Gyeom. / Chemical vapor deposition of cobalt using novel cobalt(I) precursors. In: Journal of Materials Research. 2002 ; Vol. 17, No. 2. pp. 267-270.
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