Abstract
The deposition of cobalt thin films from cobalt hydride complexes, HCo[P(OR) 3] 4, where R = methyl, ethyl, i-propyl, and n-butyl, by a chemical vapor deposition method is reported. The new cobalt precursors deposited high-purity cobalt films at substrate temperatures as low as 300 °C without employing hydrogen. The deposited Co films showed smooth and dense surface morphology. The microstructure and growth rate of the deposited films depended on the reaction conditions such as substrate temperature and precursor feed. No gas phase reactions were observed during the deposition process.
| Original language | English |
|---|---|
| Pages (from-to) | 267-270 |
| Number of pages | 4 |
| Journal | Journal of Materials Research |
| Volume | 17 |
| Issue number | 2 |
| Publication status | Published - 2002 Feb 1 |
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ASJC Scopus subject areas
- Materials Science(all)
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Chemical vapor deposition of cobalt using novel cobalt(I) precursors. / Choi, Hyungsoo; Park, Sungho; Jang, Ho Gyeom.
In: Journal of Materials Research, Vol. 17, No. 2, 01.02.2002, p. 267-270.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Chemical vapor deposition of cobalt using novel cobalt(I) precursors
AU - Choi, Hyungsoo
AU - Park, Sungho
AU - Jang, Ho Gyeom
PY - 2002/2/1
Y1 - 2002/2/1
N2 - The deposition of cobalt thin films from cobalt hydride complexes, HCo[P(OR) 3] 4, where R = methyl, ethyl, i-propyl, and n-butyl, by a chemical vapor deposition method is reported. The new cobalt precursors deposited high-purity cobalt films at substrate temperatures as low as 300 °C without employing hydrogen. The deposited Co films showed smooth and dense surface morphology. The microstructure and growth rate of the deposited films depended on the reaction conditions such as substrate temperature and precursor feed. No gas phase reactions were observed during the deposition process.
AB - The deposition of cobalt thin films from cobalt hydride complexes, HCo[P(OR) 3] 4, where R = methyl, ethyl, i-propyl, and n-butyl, by a chemical vapor deposition method is reported. The new cobalt precursors deposited high-purity cobalt films at substrate temperatures as low as 300 °C without employing hydrogen. The deposited Co films showed smooth and dense surface morphology. The microstructure and growth rate of the deposited films depended on the reaction conditions such as substrate temperature and precursor feed. No gas phase reactions were observed during the deposition process.
UR - http://www.scopus.com/inward/record.url?scp=0036477603&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036477603&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0036477603
VL - 17
SP - 267
EP - 270
JO - Journal of Materials Research
JF - Journal of Materials Research
SN - 0884-2914
IS - 2
ER -