Chemically cross-linked thin poly(vinylidene fluoride-cotrifluoroethylene) films for nonvolatile ferroelectric polymer memory

Yu Jin Shin, Seok Ju Kang, Hee Joon Jung, Youn Jung Park, Insung Bae, Dong Hoon Choi, Cheolmin Park

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

Both chemically and electrically robust ferroelectric poly(vinylidene fluoride-co-trifluoro ethylene) (PVDF-TrFE) films were developed by spin-coating and subsequent thermal annealing with the thermal cross-linking agent 2,4,4-trimethyl-1,6-hexanediamine (THDA). Well-defined ferroelectric β crystalline domains were developed with THDA up to approximately 50 wt %, with respect to polymer concentration, resulting in characteristic ferroelectric hysteresis polarization-voltage loops in metal/cross-linked ferroelectric layer/metal capacitors with remnant polarization of approximately 4 μC/cm2. Our chemically networked film allowed for facile stacking of a solution-processable organic semiconductor on top of the film, leading to a bottom-gate ferroelectric field effect transistor (FeFET). A low-voltage operating FeFET was realized with a networked PVDF-TrFE film, which had significantly reduced gate leakage current between the drain and gate electrodes. A solution-processed single crystalline tri-isopropylsilylethynyl pentacene FeFET with a chemically cross-linked PVDF-TrFE film showed reliable I-V hysteresis with source-drain ON/OFF current bistablility of 1 × 103 at a sweeping gate voltage of ±20 V. Furthermore, both thermal micro/nanoimprinting and transfer printing techniques were conveniently combined for micro/nanopatterning of chemically resistant cross-linked PVDF-TrFE films.

Original languageEnglish
Pages (from-to)582-589
Number of pages8
JournalACS Applied Materials and Interfaces
Volume3
Issue number2
DOIs
Publication statusPublished - 2011 Feb 23

Keywords

  • 2,4,4-trimethyl-1,6-hexanediamine
  • Capacitor
  • Micropatterning
  • Nonvolatile ferroelectric memory
  • PVDF-TrFE
  • Thermal cross-linking
  • Transistor memory

ASJC Scopus subject areas

  • Materials Science(all)

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