Chromium/Nickel-Doped Silicon Oxide Thin-Film Electrode: Mechanism and Application to Microscale Light-Emitting Diodes

Kyung Rock Son, Byeong Ryong Lee, Tae Geun Kim

Research output: Contribution to journalArticle

Abstract

Light extraction of microscale light-emitting diodes (μLEDs) is fundamentally limited by p-type metal electrodes for current injection due to the small pixel size of the LEDs. We propose Cr/Ni-doped silicon oxide (CN-SiOX) films as p-type contact electrodes for blue μLEDs to increase the light-output power under the same emitting areas. The conductivity of CN-SiOX electrode originates from the diffusion of top Cr/Ni atoms via electric-field-induced doping treatments, which allows for effective hole injection into the active layer. Consequently, we achieved a 62% improvement in the current density and a 47% increase in the light-output power compared to ITO-based μLEDs.

Original languageEnglish
Pages (from-to)40967-40972
Number of pages6
JournalACS Applied Materials and Interfaces
Volume10
Issue number48
DOIs
Publication statusPublished - 2018 Dec 5

Fingerprint

Silicon oxides
Chromium
Nickel
Oxide films
Light emitting diodes
Thin films
Electrodes
Current density
Pixels
Metals
Electric fields
Doping (additives)
Atoms

Keywords

  • electrical doping treatment
  • hole injection
  • microscale light-emitting diodes
  • Schottky barrier height
  • silicon oxide
  • transmittance

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Chromium/Nickel-Doped Silicon Oxide Thin-Film Electrode : Mechanism and Application to Microscale Light-Emitting Diodes. / Son, Kyung Rock; Lee, Byeong Ryong; Kim, Tae Geun.

In: ACS Applied Materials and Interfaces, Vol. 10, No. 48, 05.12.2018, p. 40967-40972.

Research output: Contribution to journalArticle

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