Clarification of difference for transition between photoluminescence and cathode-luminescence based on GaMnN

J. W. Lee, Yoon Shon, N. G. Subramaniam, Y. H. Kwon, T. W. Kang, Hyunsik Im, H. S. Kim, C. S. Park, E. K. Kim, J. D. Song, Hyun Cheol Koo, D. J. Fu

Research output: Contribution to journalArticle

Abstract

GaN:Mn epilayers were grown on Al<inf>2</inf>O<inf>3</inf> substrate uisng molecular beam epitaxy (MBE) and were subsequently implanted with Mn<sup>+</sup> ions (1% and 10%). Photoluminescence (PL) with 1% of Mn showed that optical transitions related to Mn revealed the donor-Mn pair (D, Mn) at 2.5 eV and the electron-Mn pair (e, Mn) around 3.1 eV, and yellow luminescence (YL) around 2.20-2.25 eV. Photoluminescence (PL) with 10% of Mn showed the same but enhanced optical transitions as above. However, the new transitions around 1.65 eV for the sample with 10% which did not appeared with Mn of 1% were very weakly produced. The results of cathode-luminescence (CL) with 10% of Mn showed transitions related to Mn in PL together with new transitions around 1.72 eV. However, the new transitions around 1.72 eV for the sample with 10% according to high accelerating voltage were very remarkably activated in contrast with PL transitions which appeared were very weakly produced in samples with Mn of 10%. Transitions around 1.72 eV in CL correspond to though around 1.65 eV in PL. This result means that deep donor (probably, V<inf>N</inf>) is detected with increasing accelerating voltage and Mn-V<inf>N</inf> complex is formed. This is supported by strong electron beam sensitivity of the IR emission bands. It is well known that heavy Mn doping (>∼10<sup>19</sup> C m<sup>-3</sup>) leads to a downshift of the Fermi level and promotes the formation of defect complexes of Mn-V<inf>N</inf>. In our case, Mn doping concentration is >∼10<sup>21</sup> C m<sup>-3</sup>. Therefore, it is conjectured that the CL transition around 1.72 eV corresponds to Mn-V<inf>N</inf> complex.

Original languageEnglish
Article number13530
Pages (from-to)288-292
Number of pages5
JournalJournal of Luminescence
Volume168
DOIs
Publication statusPublished - 2015 Aug 5

Fingerprint

Electron transitions
Luminescence
Photoluminescence
Electrodes
Cathodes
cathodes
luminescence
photoluminescence
Optical transitions
Electrons
Doping (additives)
optical transition
Epilayers
Electric potential
Fermi level
Molecular beam epitaxy
Ions
Electron beams
electric potential
Defects

Keywords

  • Cathode-luminescence (CL)
  • GaMnN
  • Photoluminescence (PL)

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Chemistry(all)
  • Biochemistry
  • Biophysics

Cite this

Lee, J. W., Shon, Y., Subramaniam, N. G., Kwon, Y. H., Kang, T. W., Im, H., ... Fu, D. J. (2015). Clarification of difference for transition between photoluminescence and cathode-luminescence based on GaMnN. Journal of Luminescence, 168, 288-292. [13530]. https://doi.org/10.1016/j.jlumin.2015.08.025

Clarification of difference for transition between photoluminescence and cathode-luminescence based on GaMnN. / Lee, J. W.; Shon, Yoon; Subramaniam, N. G.; Kwon, Y. H.; Kang, T. W.; Im, Hyunsik; Kim, H. S.; Park, C. S.; Kim, E. K.; Song, J. D.; Koo, Hyun Cheol; Fu, D. J.

In: Journal of Luminescence, Vol. 168, 13530, 05.08.2015, p. 288-292.

Research output: Contribution to journalArticle

Lee, JW, Shon, Y, Subramaniam, NG, Kwon, YH, Kang, TW, Im, H, Kim, HS, Park, CS, Kim, EK, Song, JD, Koo, HC & Fu, DJ 2015, 'Clarification of difference for transition between photoluminescence and cathode-luminescence based on GaMnN', Journal of Luminescence, vol. 168, 13530, pp. 288-292. https://doi.org/10.1016/j.jlumin.2015.08.025
Lee, J. W. ; Shon, Yoon ; Subramaniam, N. G. ; Kwon, Y. H. ; Kang, T. W. ; Im, Hyunsik ; Kim, H. S. ; Park, C. S. ; Kim, E. K. ; Song, J. D. ; Koo, Hyun Cheol ; Fu, D. J. / Clarification of difference for transition between photoluminescence and cathode-luminescence based on GaMnN. In: Journal of Luminescence. 2015 ; Vol. 168. pp. 288-292.
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title = "Clarification of difference for transition between photoluminescence and cathode-luminescence based on GaMnN",
abstract = "GaN:Mn epilayers were grown on Al2O3 substrate uisng molecular beam epitaxy (MBE) and were subsequently implanted with Mn+ ions (1{\%} and 10{\%}). Photoluminescence (PL) with 1{\%} of Mn showed that optical transitions related to Mn revealed the donor-Mn pair (D, Mn) at 2.5 eV and the electron-Mn pair (e, Mn) around 3.1 eV, and yellow luminescence (YL) around 2.20-2.25 eV. Photoluminescence (PL) with 10{\%} of Mn showed the same but enhanced optical transitions as above. However, the new transitions around 1.65 eV for the sample with 10{\%} which did not appeared with Mn of 1{\%} were very weakly produced. The results of cathode-luminescence (CL) with 10{\%} of Mn showed transitions related to Mn in PL together with new transitions around 1.72 eV. However, the new transitions around 1.72 eV for the sample with 10{\%} according to high accelerating voltage were very remarkably activated in contrast with PL transitions which appeared were very weakly produced in samples with Mn of 10{\%}. Transitions around 1.72 eV in CL correspond to though around 1.65 eV in PL. This result means that deep donor (probably, VN) is detected with increasing accelerating voltage and Mn-VN complex is formed. This is supported by strong electron beam sensitivity of the IR emission bands. It is well known that heavy Mn doping (>∼1019 C m-3) leads to a downshift of the Fermi level and promotes the formation of defect complexes of Mn-VN. In our case, Mn doping concentration is >∼1021 C m-3. Therefore, it is conjectured that the CL transition around 1.72 eV corresponds to Mn-VN complex.",
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T1 - Clarification of difference for transition between photoluminescence and cathode-luminescence based on GaMnN

AU - Lee, J. W.

AU - Shon, Yoon

AU - Subramaniam, N. G.

AU - Kwon, Y. H.

AU - Kang, T. W.

AU - Im, Hyunsik

AU - Kim, H. S.

AU - Park, C. S.

AU - Kim, E. K.

AU - Song, J. D.

AU - Koo, Hyun Cheol

AU - Fu, D. J.

PY - 2015/8/5

Y1 - 2015/8/5

N2 - GaN:Mn epilayers were grown on Al2O3 substrate uisng molecular beam epitaxy (MBE) and were subsequently implanted with Mn+ ions (1% and 10%). Photoluminescence (PL) with 1% of Mn showed that optical transitions related to Mn revealed the donor-Mn pair (D, Mn) at 2.5 eV and the electron-Mn pair (e, Mn) around 3.1 eV, and yellow luminescence (YL) around 2.20-2.25 eV. Photoluminescence (PL) with 10% of Mn showed the same but enhanced optical transitions as above. However, the new transitions around 1.65 eV for the sample with 10% which did not appeared with Mn of 1% were very weakly produced. The results of cathode-luminescence (CL) with 10% of Mn showed transitions related to Mn in PL together with new transitions around 1.72 eV. However, the new transitions around 1.72 eV for the sample with 10% according to high accelerating voltage were very remarkably activated in contrast with PL transitions which appeared were very weakly produced in samples with Mn of 10%. Transitions around 1.72 eV in CL correspond to though around 1.65 eV in PL. This result means that deep donor (probably, VN) is detected with increasing accelerating voltage and Mn-VN complex is formed. This is supported by strong electron beam sensitivity of the IR emission bands. It is well known that heavy Mn doping (>∼1019 C m-3) leads to a downshift of the Fermi level and promotes the formation of defect complexes of Mn-VN. In our case, Mn doping concentration is >∼1021 C m-3. Therefore, it is conjectured that the CL transition around 1.72 eV corresponds to Mn-VN complex.

AB - GaN:Mn epilayers were grown on Al2O3 substrate uisng molecular beam epitaxy (MBE) and were subsequently implanted with Mn+ ions (1% and 10%). Photoluminescence (PL) with 1% of Mn showed that optical transitions related to Mn revealed the donor-Mn pair (D, Mn) at 2.5 eV and the electron-Mn pair (e, Mn) around 3.1 eV, and yellow luminescence (YL) around 2.20-2.25 eV. Photoluminescence (PL) with 10% of Mn showed the same but enhanced optical transitions as above. However, the new transitions around 1.65 eV for the sample with 10% which did not appeared with Mn of 1% were very weakly produced. The results of cathode-luminescence (CL) with 10% of Mn showed transitions related to Mn in PL together with new transitions around 1.72 eV. However, the new transitions around 1.72 eV for the sample with 10% according to high accelerating voltage were very remarkably activated in contrast with PL transitions which appeared were very weakly produced in samples with Mn of 10%. Transitions around 1.72 eV in CL correspond to though around 1.65 eV in PL. This result means that deep donor (probably, VN) is detected with increasing accelerating voltage and Mn-VN complex is formed. This is supported by strong electron beam sensitivity of the IR emission bands. It is well known that heavy Mn doping (>∼1019 C m-3) leads to a downshift of the Fermi level and promotes the formation of defect complexes of Mn-VN. In our case, Mn doping concentration is >∼1021 C m-3. Therefore, it is conjectured that the CL transition around 1.72 eV corresponds to Mn-VN complex.

KW - Cathode-luminescence (CL)

KW - GaMnN

KW - Photoluminescence (PL)

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