We report on the fabrication of Co 3.4 at. % doped TiO2 nanowire-based field-effect transistors with a back gate of heavily doped Si substrate and their electric field-effect functions. The TiO2: Co nanowire, which was fabricated utilizing a conventional magnetron sputtering technique on a suspended molecular template between electrodes, is a polycrystalline and consists of a chain of nanoparticles on a molecular template. The N -type field-effect transistors prepared from the suspended Co- TiO2 nanowire junction were exhibited on currents, transconductances, and a mobility of up to 0.1 mAμm, 0.2 μAV, and μe ≈66 cm2 V s, respectively, at room temperature. The unique structure of these inorganic-organic functional devices may enable the fabrication of flexible nanoelectrospin devices.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)