Co -doped TiO2 nanowire electric field-effect transistors fabricated by suspended molecular template method

Yun-Hi Lee, Je Min Yoo, Dong Hyuk Park, D. H. Kim, Byeong Kwon Ju

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

We report on the fabrication of Co 3.4 at. % doped TiO2 nanowire-based field-effect transistors with a back gate of heavily doped Si substrate and their electric field-effect functions. The TiO2: Co nanowire, which was fabricated utilizing a conventional magnetron sputtering technique on a suspended molecular template between electrodes, is a polycrystalline and consists of a chain of nanoparticles on a molecular template. The N -type field-effect transistors prepared from the suspended Co- TiO2 nanowire junction were exhibited on currents, transconductances, and a mobility of up to 0.1 mAμm, 0.2 μAV, and μe ≈66 cm2 V s, respectively, at room temperature. The unique structure of these inorganic-organic functional devices may enable the fabrication of flexible nanoelectrospin devices.

Original languageEnglish
Article number033110
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number3
DOIs
Publication statusPublished - 2005 Jan 17

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nanowires
templates
field effect transistors
electric fields
fabrication
transconductance
magnetron sputtering
nanoparticles
electrodes
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Co -doped TiO2 nanowire electric field-effect transistors fabricated by suspended molecular template method. / Lee, Yun-Hi; Yoo, Je Min; Park, Dong Hyuk; Kim, D. H.; Ju, Byeong Kwon.

In: Applied Physics Letters, Vol. 86, No. 3, 033110, 17.01.2005, p. 1-3.

Research output: Contribution to journalArticle

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