Co -doped TiO2 nanowire electric field-effect transistors fabricated by suspended molecular template method

Yun Hi Lee, Je Min Yoo, Dong Hyuk Park, D. H. Kim, B. K. Ju

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

We report on the fabrication of Co 3.4 at. % doped TiO2 nanowire-based field-effect transistors with a back gate of heavily doped Si substrate and their electric field-effect functions. The TiO2: Co nanowire, which was fabricated utilizing a conventional magnetron sputtering technique on a suspended molecular template between electrodes, is a polycrystalline and consists of a chain of nanoparticles on a molecular template. The N -type field-effect transistors prepared from the suspended Co- TiO2 nanowire junction were exhibited on currents, transconductances, and a mobility of up to 0.1 mAμm, 0.2 μAV, and μe ≈66 cm2 V s, respectively, at room temperature. The unique structure of these inorganic-organic functional devices may enable the fabrication of flexible nanoelectrospin devices.

Original languageEnglish
Article number033110
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number3
DOIs
Publication statusPublished - 2005 Jan 17

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Co -doped TiO2 nanowire electric field-effect transistors fabricated by suspended molecular template method'. Together they form a unique fingerprint.

  • Cite this