Coexistence of magnetic domains with in-plane and out-of-plane anisotropy in a single GaMnAs film

Sangyeop Lee, Hakjoon Lee, Taehee Yoo, Sanghoon Lee, X. Liu, J. K. Furdyna

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Magnetic anisotropy of the ferromagnetic semiconductor GaMnAs film grown on a (001) GaAs substrate was investigated by using Hall effect and magnetization measurements. When field strength was swept at a fixed direction in the film plane, abrupt transitions in the Hall resistance appeared while reducing the field strength even before the field direction is reversed. We show that this phenomenon is related to the presence of magnetic domains with a vertical easy axis in the film, as identified via Hall measurements performed with a field applied normal to the plane. The coexistence of magnetic domains with both in-pane and out-of-plane anisotropies in a single film was further confirmed by direct measurement of the corresponding magnetization components of the film.

Original languageEnglish
Pages (from-to)337-341
Number of pages5
JournalJournal of Crystal Growth
Volume378
DOIs
Publication statusPublished - 2013

Keywords

  • Characterization
  • Magnetic materials
  • Molecular beam epitaxy
  • Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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