Coherent scattering stereoscopic microscopy for mask inspection of extreme ultra-violet lithography

Ki Hyuk Kim, Jung Guen Jo, Min Chul Park, Byeong Kwon Ju, Sungjin Cho, Jung Young Son

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Recently, mask inspection for extreme ultraviolet lithography has been in the spotlight as the next-generation lithography technique in the field of semiconductor production. This technology is used to make semiconductors more delicate even as they become tinier. In mask inspection, defect sizes and locations are major factors for aggravating mask defects which cause errors on wafer patterns. This paper addresses a simulated solution of coherent scattering stereoscopic microscopy for considering the mitigation of mask defects. To perform the inspection of mask defects for the stereoscopic microscopy, we construct a stereo aerial image with a disparity map produced by a Hybrid input-output algorithm and disparity estimation methods. Preliminary results show that mask inspection by coherent scattering stereoscopic microscopy is expected to be performed in a more accurate way compared to 2D mask inspection.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume8738
DOIs
Publication statusPublished - 2013 Aug 12
EventThree-Dimensional Imaging, Visualization, and Display 2013 - Baltimore, MD, United States
Duration: 2013 Apr 292013 Apr 30

Other

OtherThree-Dimensional Imaging, Visualization, and Display 2013
CountryUnited States
CityBaltimore, MD
Period13/4/2913/4/30

Fingerprint

Mask Inspection
Coherent scattering
Extreme ultraviolet lithography
Extreme Ultraviolet Lithography
coherent scattering
Microscopy
Masks
inspection
Microscopic examination
masks
lithography
Defects
Inspection
Scattering
microscopy
Mask
Semiconductors
defects
Aerial Image
Lithography

Keywords

  • Extreme ultraviolet lithography
  • Mask inspection
  • Microscopy
  • Stereoscopic

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Kim, K. H., Jo, J. G., Park, M. C., Ju, B. K., Cho, S., & Son, J. Y. (2013). Coherent scattering stereoscopic microscopy for mask inspection of extreme ultra-violet lithography. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 8738). [87380Z] https://doi.org/10.1117/12.2018588

Coherent scattering stereoscopic microscopy for mask inspection of extreme ultra-violet lithography. / Kim, Ki Hyuk; Jo, Jung Guen; Park, Min Chul; Ju, Byeong Kwon; Cho, Sungjin; Son, Jung Young.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8738 2013. 87380Z.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kim, KH, Jo, JG, Park, MC, Ju, BK, Cho, S & Son, JY 2013, Coherent scattering stereoscopic microscopy for mask inspection of extreme ultra-violet lithography. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 8738, 87380Z, Three-Dimensional Imaging, Visualization, and Display 2013, Baltimore, MD, United States, 13/4/29. https://doi.org/10.1117/12.2018588
Kim KH, Jo JG, Park MC, Ju BK, Cho S, Son JY. Coherent scattering stereoscopic microscopy for mask inspection of extreme ultra-violet lithography. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8738. 2013. 87380Z https://doi.org/10.1117/12.2018588
Kim, Ki Hyuk ; Jo, Jung Guen ; Park, Min Chul ; Ju, Byeong Kwon ; Cho, Sungjin ; Son, Jung Young. / Coherent scattering stereoscopic microscopy for mask inspection of extreme ultra-violet lithography. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8738 2013.
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