Collector vertical scaling and performance tradeoffs in 300 GHz SiGe HBTs

J. S. Rieh, M. Khater, K. T. Schonenberg, F. Pagette, P. Smith, T. N. Adam, K. Stein, D. Ahlgren, G. Freeman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

The impact of the collector vertical scaling on the tradeoff between f t and f max, with SiGe Heterojunction Bipolar Transistors (BPT) of ∼300 GHz performance was discussed. Its impact on the avalanche breakdown behavior of the devices was also discussed. It was observed that the SIC dose variation affects f T and f max in opposite directions in 300 GHz SiGe HBTs. The SIC dose variation can be exploited to selectively optimize the devices for either f T or f max, depending on the requirement from a given application.

Original languageEnglish
Title of host publicationDevice Research Conference - Conference Digest, 62nd DRC
Pages235-236
Number of pages2
DOIs
Publication statusPublished - 2004
EventDevice Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States
Duration: 2004 Jun 212004 Jun 23

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

OtherDevice Research Conference - Conference Digest, 62nd DRC
CountryUnited States
CityNotre Dame, IN
Period04/6/2104/6/23

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Collector vertical scaling and performance tradeoffs in 300 GHz SiGe HBTs'. Together they form a unique fingerprint.

  • Cite this

    Rieh, J. S., Khater, M., Schonenberg, K. T., Pagette, F., Smith, P., Adam, T. N., Stein, K., Ahlgren, D., & Freeman, G. (2004). Collector vertical scaling and performance tradeoffs in 300 GHz SiGe HBTs. In Device Research Conference - Conference Digest, 62nd DRC (pp. 235-236). [VII.B.-1] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2004.1367884