Colloidal-quantum-dot photovoltaics using atomic-ligand passivation

Jiang Tang, Kyle W. Kemp, Sjoerd Hoogland, Kwang S. Jeong, Huan Liu, Larissa Levina, Melissa Furukawa, Xihua Wang, Ratan Debnath, Dongkyu Cha, Kang Wei Chou, Armin Fischer, Aram Amassian, John B. Asbury, Edward H. Sargent

Research output: Contribution to journalArticle

1041 Citations (Scopus)

Abstract

Colloidal-quantum-dot (CQD) optoelectronics offer a compelling combination of solution processing and spectral tunability through quantum size effects. So far, CQD solar cells have relied on the use of organic ligands to passivate the surface of the semiconductor nanoparticles. Although inorganic metal chalcogenide ligands have led to record electronic transport parameters in CQD films, no photovoltaic device has been reported based on such compounds. Here we establish an atomic ligand strategy that makes use of monovalent halide anions to enhance electronic transport and successfully passivate surface defects in PbS CQD films. Both time-resolved infrared spectroscopy and transient device characterization indicate that the scheme leads to a shallower trap state distribution than the best organic ligands. Solar cells fabricated following this strategy show up to 6% solar AM1.5G power-conversion efficiency. The CQD films are deposited at room temperature and under ambient atmosphere, rendering the process amenable to low-cost, roll-by-roll fabrication.

Original languageEnglish
Pages (from-to)765-771
Number of pages7
JournalNature Materials
Volume10
Issue number10
DOIs
Publication statusPublished - 2011 Oct

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Tang, J., Kemp, K. W., Hoogland, S., Jeong, K. S., Liu, H., Levina, L., Furukawa, M., Wang, X., Debnath, R., Cha, D., Chou, K. W., Fischer, A., Amassian, A., Asbury, J. B., & Sargent, E. H. (2011). Colloidal-quantum-dot photovoltaics using atomic-ligand passivation. Nature Materials, 10(10), 765-771. https://doi.org/10.1038/nmat3118