Color emission and dielectric properties of Eu-doped Gd2O 3 gate oxide thin films

Sungho Choi, Byung Yoon Park, Taek Ahn, Ji Young Kim, Chang Seop Hong, Mi Hye Yi, Ha Kyun Jung

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

High-k Gd2O3 used for thin film transistor (TFT) gate insulators has been synthesized via a simple solution process. Phase analysis and capacitive performance reveal that a high dielectric constant of ∼ 20 and a low leakage current level of < 10-8 A/cm2 at 1 MV/cm with a good transparency under the visible wavelength region are readily produced by the sol-gel method. Eu3+ doping leads to an increased dielectric constant induced by the additional electric dipole transition, which is evidently visualized by the photoluminescence behavior and/or by the defect-controlled thin film microstructures. Thus, the solution-processed (Gd,Eu)2O3 film is a viable gate insulator to be considered for the proposed "color emissive" switching devices as well as for the low power-driven TFT devices.

Original languageEnglish
Pages (from-to)3272-3275
Number of pages4
JournalThin Solid Films
Volume519
Issue number10
DOIs
Publication statusPublished - 2011 Mar 1

Fingerprint

Thin film transistors
Dielectric properties
Oxide films
dielectric properties
Permittivity
Color
color
Thin films
oxides
transistors
thin films
insulators
Leakage currents
Transparency
permittivity
Sol-gel process
Photoluminescence
Doping (additives)
Wavelength
Defects

Keywords

  • Capacitance voltage
  • Dielectric properties
  • Gadolinium oxide
  • Photoluminescence
  • Rare earth doping
  • Sol-gel

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Choi, S., Park, B. Y., Ahn, T., Kim, J. Y., Hong, C. S., Yi, M. H., & Jung, H. K. (2011). Color emission and dielectric properties of Eu-doped Gd2O 3 gate oxide thin films. Thin Solid Films, 519(10), 3272-3275. https://doi.org/10.1016/j.tsf.2010.12.030

Color emission and dielectric properties of Eu-doped Gd2O 3 gate oxide thin films. / Choi, Sungho; Park, Byung Yoon; Ahn, Taek; Kim, Ji Young; Hong, Chang Seop; Yi, Mi Hye; Jung, Ha Kyun.

In: Thin Solid Films, Vol. 519, No. 10, 01.03.2011, p. 3272-3275.

Research output: Contribution to journalArticle

Choi, S, Park, BY, Ahn, T, Kim, JY, Hong, CS, Yi, MH & Jung, HK 2011, 'Color emission and dielectric properties of Eu-doped Gd2O 3 gate oxide thin films', Thin Solid Films, vol. 519, no. 10, pp. 3272-3275. https://doi.org/10.1016/j.tsf.2010.12.030
Choi, Sungho ; Park, Byung Yoon ; Ahn, Taek ; Kim, Ji Young ; Hong, Chang Seop ; Yi, Mi Hye ; Jung, Ha Kyun. / Color emission and dielectric properties of Eu-doped Gd2O 3 gate oxide thin films. In: Thin Solid Films. 2011 ; Vol. 519, No. 10. pp. 3272-3275.
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