Colossal electroresistance mechanism in a Au Pr0.7 Ca0.3 Mn O3 Pt sandwich structure

Evidence for a Mott transition

D. S. Kim, Y. H. Kim, Cheol Eui Lee, Y. T. Kim

Research output: Contribution to journalArticle

55 Citations (Scopus)

Abstract

The resistive switching characteristics of Au Pr0.7 Ca0.3 Mn O3 (PCMO) Pt sandwich structure were investigated by changing growth temperature of the PCMO film, adding an oxygen annealing process, and modifying the Au/PCMO/Pt sandwich structure by inserting a PrMn O3 (PMO) or CaMn O3 (CMO) layer at the Au/PCMO interface. From these experiments, we obtained the following results. First, only crystalline PCMO films exhibited reversible resistive switching behavior in Au/PCMO/Pt sandwich structure. Secondly, the Mn4+ Mn3+ ratio at the PCMO surface was changed by oxygen annealing of the PCMO film, resulting in an increase of the resistance ratio of high resistance state and low resistance state. Lastly, we could not observe the resistive switching behavior in Au/PMO/PCMO/Pt and Au/CMO/PCMO/Pt sandwich structures. The resistive switching behavior could be observed only in Au/PCMO/PMO(or CMO)/PCMO/Pt sandwich structure. These results indicate that the resistive switching of Au/PCMO/Pt sandwich structure depends on the mixed valence state Mn4+ Mn3+ of Mn ions in the metal/PCMO interface domains. This result can be regarded as evidence for a Mott transition.

Original languageEnglish
Article number174430
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume74
Issue number17
DOIs
Publication statusPublished - 2006 Dec 5

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Sandwich structures
sandwich structures
Annealing
Oxygen
annealing
low resistance
high resistance
Growth temperature
oxygen
Metals
Ions
Crystalline materials
valence
metals
ions
Experiments

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Colossal electroresistance mechanism in a Au Pr0.7 Ca0.3 Mn O3 Pt sandwich structure : Evidence for a Mott transition. / Kim, D. S.; Kim, Y. H.; Lee, Cheol Eui; Kim, Y. T.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 74, No. 17, 174430, 05.12.2006.

Research output: Contribution to journalArticle

@article{de5ad27dab1a443bba80ed87eb2d5103,
title = "Colossal electroresistance mechanism in a Au Pr0.7 Ca0.3 Mn O3 Pt sandwich structure: Evidence for a Mott transition",
abstract = "The resistive switching characteristics of Au Pr0.7 Ca0.3 Mn O3 (PCMO) Pt sandwich structure were investigated by changing growth temperature of the PCMO film, adding an oxygen annealing process, and modifying the Au/PCMO/Pt sandwich structure by inserting a PrMn O3 (PMO) or CaMn O3 (CMO) layer at the Au/PCMO interface. From these experiments, we obtained the following results. First, only crystalline PCMO films exhibited reversible resistive switching behavior in Au/PCMO/Pt sandwich structure. Secondly, the Mn4+ Mn3+ ratio at the PCMO surface was changed by oxygen annealing of the PCMO film, resulting in an increase of the resistance ratio of high resistance state and low resistance state. Lastly, we could not observe the resistive switching behavior in Au/PMO/PCMO/Pt and Au/CMO/PCMO/Pt sandwich structures. The resistive switching behavior could be observed only in Au/PCMO/PMO(or CMO)/PCMO/Pt sandwich structure. These results indicate that the resistive switching of Au/PCMO/Pt sandwich structure depends on the mixed valence state Mn4+ Mn3+ of Mn ions in the metal/PCMO interface domains. This result can be regarded as evidence for a Mott transition.",
author = "Kim, {D. S.} and Kim, {Y. H.} and Lee, {Cheol Eui} and Kim, {Y. T.}",
year = "2006",
month = "12",
day = "5",
doi = "10.1103/PhysRevB.74.174430",
language = "English",
volume = "74",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Institute of Physics Publising LLC",
number = "17",

}

TY - JOUR

T1 - Colossal electroresistance mechanism in a Au Pr0.7 Ca0.3 Mn O3 Pt sandwich structure

T2 - Evidence for a Mott transition

AU - Kim, D. S.

AU - Kim, Y. H.

AU - Lee, Cheol Eui

AU - Kim, Y. T.

PY - 2006/12/5

Y1 - 2006/12/5

N2 - The resistive switching characteristics of Au Pr0.7 Ca0.3 Mn O3 (PCMO) Pt sandwich structure were investigated by changing growth temperature of the PCMO film, adding an oxygen annealing process, and modifying the Au/PCMO/Pt sandwich structure by inserting a PrMn O3 (PMO) or CaMn O3 (CMO) layer at the Au/PCMO interface. From these experiments, we obtained the following results. First, only crystalline PCMO films exhibited reversible resistive switching behavior in Au/PCMO/Pt sandwich structure. Secondly, the Mn4+ Mn3+ ratio at the PCMO surface was changed by oxygen annealing of the PCMO film, resulting in an increase of the resistance ratio of high resistance state and low resistance state. Lastly, we could not observe the resistive switching behavior in Au/PMO/PCMO/Pt and Au/CMO/PCMO/Pt sandwich structures. The resistive switching behavior could be observed only in Au/PCMO/PMO(or CMO)/PCMO/Pt sandwich structure. These results indicate that the resistive switching of Au/PCMO/Pt sandwich structure depends on the mixed valence state Mn4+ Mn3+ of Mn ions in the metal/PCMO interface domains. This result can be regarded as evidence for a Mott transition.

AB - The resistive switching characteristics of Au Pr0.7 Ca0.3 Mn O3 (PCMO) Pt sandwich structure were investigated by changing growth temperature of the PCMO film, adding an oxygen annealing process, and modifying the Au/PCMO/Pt sandwich structure by inserting a PrMn O3 (PMO) or CaMn O3 (CMO) layer at the Au/PCMO interface. From these experiments, we obtained the following results. First, only crystalline PCMO films exhibited reversible resistive switching behavior in Au/PCMO/Pt sandwich structure. Secondly, the Mn4+ Mn3+ ratio at the PCMO surface was changed by oxygen annealing of the PCMO film, resulting in an increase of the resistance ratio of high resistance state and low resistance state. Lastly, we could not observe the resistive switching behavior in Au/PMO/PCMO/Pt and Au/CMO/PCMO/Pt sandwich structures. The resistive switching behavior could be observed only in Au/PCMO/PMO(or CMO)/PCMO/Pt sandwich structure. These results indicate that the resistive switching of Au/PCMO/Pt sandwich structure depends on the mixed valence state Mn4+ Mn3+ of Mn ions in the metal/PCMO interface domains. This result can be regarded as evidence for a Mott transition.

UR - http://www.scopus.com/inward/record.url?scp=33751538233&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33751538233&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.74.174430

DO - 10.1103/PhysRevB.74.174430

M3 - Article

VL - 74

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 17

M1 - 174430

ER -