Comment on "Spectral identification of thin film coated and solid form semiconductor neutron detectors" by McGregor and Shultis

S. Hallbeck, A. N. Caruso, S. Adenwalla, J. Brand, Dongjin Byun, H. X. Jiang, J. Y. Lin, Ya B. Losovyj, C. Lundstedt, D. N. McIlroy, W. K. Pitts, B. W. Robertson, P. A. Dowben, D. S. McGregor, J. K. Shultis

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The spectral properties of thin film coated and solid form semiconductor neutron detectors were studied. It was found that the peaks corresponding to single capture products in the simulations have tails at lower energies for conversion layer devices. At higher energies for true (non-Schottky) homojunctions and heterojunction diodes, peaks were found to correspond to single capture events even for film thickness below 1 μm. This phenomena suggested that in a heterojunction diode formed by semiconducting boron carbide and Si, electrical signals could be collected from along the reaction product paths within both boron carbide and silicon.

Original languageEnglish
Pages (from-to)228-231
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume536
Issue number1-2
DOIs
Publication statusPublished - 2005 Jan 1

Keywords

  • Diodes
  • Electron spectroscopy
  • Neutron detection
  • Semiconductor detector

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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