Compact 232-250-GHz Traveling-Wave Frequency Doubler With Peak Output Power of 5.2 dBm and Efficiency of 2.9%

Kyeongho Yeom, Dongkyo Kim, Sanggeun Jeon

Research output: Contribution to journalArticlepeer-review

Abstract

A 232-250-GHz traveling-wave frequency doubler is presented using a 250-nm InP double heterodyne bipolar transistor (DHBT) technology. Compared to the previous traveling-wave structures, the proposed frequency doubler employs physical open at the end of the input feed line, thus minimizing the input signal leakage and avoiding the crossover of the output signal line. In addition, the output power is maximized by load-pull matching at the 2nd harmonic while the fundamental suppression is enhanced by phase compensation of the differential signal. The frequency doubler exhibits peak output power of 5.2 dBm at 240 GHz with a conversion gain of -4.3 dB and overall efficiency of 2.9%. The 3-dB bandwidth for output power is from 232 to 250 GHz. The fundamental suppression is 25 to 33 dB over the bandwidth. The chip size is as small as 443 ×536μm2 owing to the traveling-wave structure requiring no balun.

Original languageEnglish
Pages (from-to)1055-1058
Number of pages4
JournalIEEE Microwave and Wireless Components Letters
Volume32
Issue number9
DOIs
Publication statusPublished - 2022 Sep 1

Keywords

  • Frequency doubler
  • InP double heterodyne bipolar transistor (DHBT)
  • WR-3.4 band
  • high-power terahertz source
  • traveling wave

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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