Compact and low-loss wilkinson power divider using a high-Q spiral inductor on a sapphire substrate

Tae Woong Yoon, Dong Su Kim, Jong Min Yook

Research output: Contribution to journalArticle

Abstract

In this article, a high-performance Wilkinson power divider (WPD) using lumped elements on a sapphire substrate is presented. The proposed WPD is achieved by replacing the transmission line of the conventional WPD with a π-type equivalent circuit. It has a thick metal spiral inductor, and an organic layer, with thicknesses of 40 and 60 μm, respectively, and the Q-factor was 47 at 2 GHz. The measurement result shows excellent RF performance with return loss (S11) and isolation (S21) better than 15 and 12 dB, respectively, and the average insertion loss is lower than 0.3 dB in the operating bandwidths of 3.2 to 4.2 GHz and 6.3 to 10 GHz.

Original languageEnglish
Pages (from-to)1703-1707
Number of pages5
JournalMicrowave and Optical Technology Letters
Volume60
Issue number7
DOIs
Publication statusPublished - 2018 Jul 1
Externally publishedYes

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Keywords

  • high-Q inductor
  • integrated passive devices
  • sapphire wafer
  • thin-film devices
  • Wilkinson power divider

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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