Compact MM-wave CMOS distributed amplifier using series-peaking line and M-derived section

Iljin Lee, Sangwoo Yoon, Jae-Sung Rieh, Sanggeun Jeon

Research output: Contribution to journalArticle

Abstract

An mm-wave distributed amplifier (DA) with high gain-bandwidth (GBW) product and small chip area is implemented in a 65-nm CMOS process. The DA consists of five cascode unit cells for high gain and isolation. To achieve a wide bandwidth, a series-peaking line and an m-derived section are inserted at the interstage and output networks, respectively, of each cascode unit cell. The transistor size is optimized for compromising the tradeoff between gain and bandwidth. For compact layout, all matching sections and lines are implemented using the microstrip structure. The DA exhibits a measured gain of 8.2 dB and a 3-dB bandwidth of 65 GHz, thus reaching a GBW of 163 GHz. The return loss at the input and output are both more than 13 dB over the entire bandwidth. Due to compact layout, the chip occupies only 0.5 mm2.

Original languageEnglish
Pages (from-to)814-817
Number of pages4
JournalMicrowave and Optical Technology Letters
Volume57
Issue number4
DOIs
Publication statusPublished - 2015 Apr 1

Fingerprint

distributed amplifiers
CMOS
bandwidth
Bandwidth
high gain
layouts
chips
output
tradeoffs
cells
isolation
Transistors
transistors
products

Keywords

  • CMOS distributed amplifier
  • m-derived section
  • mm-wave integrated circuit
  • series-peaking line

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Compact MM-wave CMOS distributed amplifier using series-peaking line and M-derived section. / Lee, Iljin; Yoon, Sangwoo; Rieh, Jae-Sung; Jeon, Sanggeun.

In: Microwave and Optical Technology Letters, Vol. 57, No. 4, 01.04.2015, p. 814-817.

Research output: Contribution to journalArticle

@article{f009af5168c0419786872adc5462caf6,
title = "Compact MM-wave CMOS distributed amplifier using series-peaking line and M-derived section",
abstract = "An mm-wave distributed amplifier (DA) with high gain-bandwidth (GBW) product and small chip area is implemented in a 65-nm CMOS process. The DA consists of five cascode unit cells for high gain and isolation. To achieve a wide bandwidth, a series-peaking line and an m-derived section are inserted at the interstage and output networks, respectively, of each cascode unit cell. The transistor size is optimized for compromising the tradeoff between gain and bandwidth. For compact layout, all matching sections and lines are implemented using the microstrip structure. The DA exhibits a measured gain of 8.2 dB and a 3-dB bandwidth of 65 GHz, thus reaching a GBW of 163 GHz. The return loss at the input and output are both more than 13 dB over the entire bandwidth. Due to compact layout, the chip occupies only 0.5 mm2.",
keywords = "CMOS distributed amplifier, m-derived section, mm-wave integrated circuit, series-peaking line",
author = "Iljin Lee and Sangwoo Yoon and Jae-Sung Rieh and Sanggeun Jeon",
year = "2015",
month = "4",
day = "1",
doi = "10.1002/mop.28952",
language = "English",
volume = "57",
pages = "814--817",
journal = "Microwave and Optical Technology Letters",
issn = "0895-2477",
publisher = "John Wiley and Sons Inc.",
number = "4",

}

TY - JOUR

T1 - Compact MM-wave CMOS distributed amplifier using series-peaking line and M-derived section

AU - Lee, Iljin

AU - Yoon, Sangwoo

AU - Rieh, Jae-Sung

AU - Jeon, Sanggeun

PY - 2015/4/1

Y1 - 2015/4/1

N2 - An mm-wave distributed amplifier (DA) with high gain-bandwidth (GBW) product and small chip area is implemented in a 65-nm CMOS process. The DA consists of five cascode unit cells for high gain and isolation. To achieve a wide bandwidth, a series-peaking line and an m-derived section are inserted at the interstage and output networks, respectively, of each cascode unit cell. The transistor size is optimized for compromising the tradeoff between gain and bandwidth. For compact layout, all matching sections and lines are implemented using the microstrip structure. The DA exhibits a measured gain of 8.2 dB and a 3-dB bandwidth of 65 GHz, thus reaching a GBW of 163 GHz. The return loss at the input and output are both more than 13 dB over the entire bandwidth. Due to compact layout, the chip occupies only 0.5 mm2.

AB - An mm-wave distributed amplifier (DA) with high gain-bandwidth (GBW) product and small chip area is implemented in a 65-nm CMOS process. The DA consists of five cascode unit cells for high gain and isolation. To achieve a wide bandwidth, a series-peaking line and an m-derived section are inserted at the interstage and output networks, respectively, of each cascode unit cell. The transistor size is optimized for compromising the tradeoff between gain and bandwidth. For compact layout, all matching sections and lines are implemented using the microstrip structure. The DA exhibits a measured gain of 8.2 dB and a 3-dB bandwidth of 65 GHz, thus reaching a GBW of 163 GHz. The return loss at the input and output are both more than 13 dB over the entire bandwidth. Due to compact layout, the chip occupies only 0.5 mm2.

KW - CMOS distributed amplifier

KW - m-derived section

KW - mm-wave integrated circuit

KW - series-peaking line

UR - http://www.scopus.com/inward/record.url?scp=84923502143&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84923502143&partnerID=8YFLogxK

U2 - 10.1002/mop.28952

DO - 10.1002/mop.28952

M3 - Article

VL - 57

SP - 814

EP - 817

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

SN - 0895-2477

IS - 4

ER -