Comparative study in response time between a current-mode and a voltage-mode sense amplifier for resistive loads in MRAM

Hye Seung Yu, Jong Chul Lim, Soo Won Kim, In Mo Kim, Sung Jong Kim, Sang Hun Song

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We comparatively study the response times of a current-mode and a voltage-mode sense amplifier for the resistive loads used in MRAM. In order to limit the applied voltage below a critical value of 0.4V across the resistors, sense amplifiers with separate input/output nodes are selected. A systematic simulation study for the resistive load variations in range of 0.5 kΩ to 8.5kΩ using a 0.35μm-CMOS technology shows that the current-mode sense amplifier shows superior response time of at least 1.3nsec over the voltage-mode sense amplifier.

Original languageEnglish
Title of host publication2004 International Conference on Communications, Circuits and Systems
Pages1179-1182
Number of pages4
Publication statusPublished - 2004
Event2004 International Conference on Communications, Circuits and Systems - Chengdu, China
Duration: 2004 Jun 272004 Jun 29

Publication series

Name2004 International Conference on Communications, Circuits and Systems
Volume2

Other

Other2004 International Conference on Communications, Circuits and Systems
CountryChina
CityChengdu
Period04/6/2704/6/29

Keywords

  • Current mode
  • MRAM
  • Sense amplifier

ASJC Scopus subject areas

  • Engineering(all)

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    Yu, H. S., Lim, J. C., Kim, S. W., Kim, I. M., Kim, S. J., & Song, S. H. (2004). Comparative study in response time between a current-mode and a voltage-mode sense amplifier for resistive loads in MRAM. In 2004 International Conference on Communications, Circuits and Systems (pp. 1179-1182). (2004 International Conference on Communications, Circuits and Systems; Vol. 2).