Comparative study on 980-nm quantum-dot and quantum-well laser diode

K. W. Kim, K. W. Jung, S. P. Ryu, N. K. Cho, J. Y. Lim, S. J. Park, J. D. Song, W. J. Choi, J. I. Lee, J. H. Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have compared the performances of 980-nm InGaAs quantum-dot and quantum-well laser diode grown by molecular beam epitaxy. The quantum-dot laser diodes show superior performance to the quantum-well laser diodes in their lower threshold current density and temperature sensitivity.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007
PublisherOptical Society of America
ISBN (Print)1424411742, 9781424411740
Publication statusPublished - 2007
EventConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007 - Seoul, Korea, Republic of
Duration: 2007 Aug 262007 Aug 26

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007
CountryKorea, Republic of
CitySeoul
Period07/8/2607/8/26

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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    Kim, K. W., Jung, K. W., Ryu, S. P., Cho, N. K., Lim, J. Y., Park, S. J., Song, J. D., Choi, W. J., Lee, J. I., & Park, J. H. (2007). Comparative study on 980-nm quantum-dot and quantum-well laser diode. In Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007 (Optics InfoBase Conference Papers). Optical Society of America.