Comparative study on the properties of amorphous carbon layers deposited from 1-hexene and propylene for dry etch hard mask application in semiconductor device manufacturing

Seungmoo Lee, Jaihyung Won, Jongsik Choi, Jihun Park, Yeonhong Jee, Hyeondeok Lee, Dong Jin Byun

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Amorphous carbon layers (ACLs) were prepared by plasma enhanced chemical vapor deposition (PECVD) from 1-hexene (C6H12) and propylene (C3H6) as a carbon source at different temperatures for dry etch hard mask of semiconductor devices manufacturing process. The deposition rate of ACL deposited at 550 °C from C 6H12 and C3H6 was 5050 Å/min and 6360 Å/min. Although the deposition rate of ACL deposited from C 6H6 was lower than that from C3H6, normalized deposition rate of ACL deposited from C6H12 was 1.64 times higher than that from C3H6. The relative amount of hydrocarbon contents measured by FTIR (Fourier transformation infrared) and TDS (thermal desorption spectroscopy) was decreased with the increase of deposition temperature. Raman results showed that the numbers and size of graphite cluster of ACLs deposited from each source were increased with the increase of deposition temperature. The extinction coefficient of ACL deposited at 550 °C from C6H12 was 0.51 and that from C3H6 was 0.48. The density of ACL deposited at 550 °C from C6H12 was 1.48 g/cm3 and that from C 3H6 was 1.45 g/cm3. The dry etching rate of ACL deposited at 550 °C from C6H12 was 1770 Å/min and that from C3H6 was 1840 Å/min. The deposition rate, dry etch rate and the amount of hydrocarbon contents of ACLs deposited from each carbon source were decreased with the increase of deposition temperature but extinction coefficient and density were increased with the increase of deposition temperature. We concluded that the variation behavior of the deposition characteristics and film properties of ACLs from C 6H12 with the increase of deposition temperature was the same as those of ACLs from C3H6. The high density and low dry etch rate of ACL from C6H12 can be explained by less hydrocarbon incorporation during deposition and these properties are more favorable for the dry etch hard mask application in semiconductor device fabrication. Crown

Original languageEnglish
Pages (from-to)6683-6687
Number of pages5
JournalThin Solid Films
Volume519
Issue number20
DOIs
Publication statusPublished - 2011 Aug 1

Fingerprint

hexenes
Amorphous carbon
Semiconductor devices
propylene
semiconductor devices
Propylene
Masks
masks
manufacturing
carbon
Deposition rates
Hydrocarbons
hydrocarbons
Temperature
1-hexene
Carbon
temperature
Thermal desorption spectroscopy
extinction
Dry etching

Keywords

  • ACL
  • CH
  • Dry etch
  • Hard mask
  • PECVD
  • Semiconductor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Comparative study on the properties of amorphous carbon layers deposited from 1-hexene and propylene for dry etch hard mask application in semiconductor device manufacturing. / Lee, Seungmoo; Won, Jaihyung; Choi, Jongsik; Park, Jihun; Jee, Yeonhong; Lee, Hyeondeok; Byun, Dong Jin.

In: Thin Solid Films, Vol. 519, No. 20, 01.08.2011, p. 6683-6687.

Research output: Contribution to journalArticle

Lee, Seungmoo ; Won, Jaihyung ; Choi, Jongsik ; Park, Jihun ; Jee, Yeonhong ; Lee, Hyeondeok ; Byun, Dong Jin. / Comparative study on the properties of amorphous carbon layers deposited from 1-hexene and propylene for dry etch hard mask application in semiconductor device manufacturing. In: Thin Solid Films. 2011 ; Vol. 519, No. 20. pp. 6683-6687.
@article{113f380f4d004dd7820d3e39ab8e1dd8,
title = "Comparative study on the properties of amorphous carbon layers deposited from 1-hexene and propylene for dry etch hard mask application in semiconductor device manufacturing",
abstract = "Amorphous carbon layers (ACLs) were prepared by plasma enhanced chemical vapor deposition (PECVD) from 1-hexene (C6H12) and propylene (C3H6) as a carbon source at different temperatures for dry etch hard mask of semiconductor devices manufacturing process. The deposition rate of ACL deposited at 550 °C from C 6H12 and C3H6 was 5050 {\AA}/min and 6360 {\AA}/min. Although the deposition rate of ACL deposited from C 6H6 was lower than that from C3H6, normalized deposition rate of ACL deposited from C6H12 was 1.64 times higher than that from C3H6. The relative amount of hydrocarbon contents measured by FTIR (Fourier transformation infrared) and TDS (thermal desorption spectroscopy) was decreased with the increase of deposition temperature. Raman results showed that the numbers and size of graphite cluster of ACLs deposited from each source were increased with the increase of deposition temperature. The extinction coefficient of ACL deposited at 550 °C from C6H12 was 0.51 and that from C3H6 was 0.48. The density of ACL deposited at 550 °C from C6H12 was 1.48 g/cm3 and that from C 3H6 was 1.45 g/cm3. The dry etching rate of ACL deposited at 550 °C from C6H12 was 1770 {\AA}/min and that from C3H6 was 1840 {\AA}/min. The deposition rate, dry etch rate and the amount of hydrocarbon contents of ACLs deposited from each carbon source were decreased with the increase of deposition temperature but extinction coefficient and density were increased with the increase of deposition temperature. We concluded that the variation behavior of the deposition characteristics and film properties of ACLs from C 6H12 with the increase of deposition temperature was the same as those of ACLs from C3H6. The high density and low dry etch rate of ACL from C6H12 can be explained by less hydrocarbon incorporation during deposition and these properties are more favorable for the dry etch hard mask application in semiconductor device fabrication. Crown",
keywords = "ACL, CH, Dry etch, Hard mask, PECVD, Semiconductor",
author = "Seungmoo Lee and Jaihyung Won and Jongsik Choi and Jihun Park and Yeonhong Jee and Hyeondeok Lee and Byun, {Dong Jin}",
year = "2011",
month = "8",
day = "1",
doi = "10.1016/j.tsf.2011.04.077",
language = "English",
volume = "519",
pages = "6683--6687",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "20",

}

TY - JOUR

T1 - Comparative study on the properties of amorphous carbon layers deposited from 1-hexene and propylene for dry etch hard mask application in semiconductor device manufacturing

AU - Lee, Seungmoo

AU - Won, Jaihyung

AU - Choi, Jongsik

AU - Park, Jihun

AU - Jee, Yeonhong

AU - Lee, Hyeondeok

AU - Byun, Dong Jin

PY - 2011/8/1

Y1 - 2011/8/1

N2 - Amorphous carbon layers (ACLs) were prepared by plasma enhanced chemical vapor deposition (PECVD) from 1-hexene (C6H12) and propylene (C3H6) as a carbon source at different temperatures for dry etch hard mask of semiconductor devices manufacturing process. The deposition rate of ACL deposited at 550 °C from C 6H12 and C3H6 was 5050 Å/min and 6360 Å/min. Although the deposition rate of ACL deposited from C 6H6 was lower than that from C3H6, normalized deposition rate of ACL deposited from C6H12 was 1.64 times higher than that from C3H6. The relative amount of hydrocarbon contents measured by FTIR (Fourier transformation infrared) and TDS (thermal desorption spectroscopy) was decreased with the increase of deposition temperature. Raman results showed that the numbers and size of graphite cluster of ACLs deposited from each source were increased with the increase of deposition temperature. The extinction coefficient of ACL deposited at 550 °C from C6H12 was 0.51 and that from C3H6 was 0.48. The density of ACL deposited at 550 °C from C6H12 was 1.48 g/cm3 and that from C 3H6 was 1.45 g/cm3. The dry etching rate of ACL deposited at 550 °C from C6H12 was 1770 Å/min and that from C3H6 was 1840 Å/min. The deposition rate, dry etch rate and the amount of hydrocarbon contents of ACLs deposited from each carbon source were decreased with the increase of deposition temperature but extinction coefficient and density were increased with the increase of deposition temperature. We concluded that the variation behavior of the deposition characteristics and film properties of ACLs from C 6H12 with the increase of deposition temperature was the same as those of ACLs from C3H6. The high density and low dry etch rate of ACL from C6H12 can be explained by less hydrocarbon incorporation during deposition and these properties are more favorable for the dry etch hard mask application in semiconductor device fabrication. Crown

AB - Amorphous carbon layers (ACLs) were prepared by plasma enhanced chemical vapor deposition (PECVD) from 1-hexene (C6H12) and propylene (C3H6) as a carbon source at different temperatures for dry etch hard mask of semiconductor devices manufacturing process. The deposition rate of ACL deposited at 550 °C from C 6H12 and C3H6 was 5050 Å/min and 6360 Å/min. Although the deposition rate of ACL deposited from C 6H6 was lower than that from C3H6, normalized deposition rate of ACL deposited from C6H12 was 1.64 times higher than that from C3H6. The relative amount of hydrocarbon contents measured by FTIR (Fourier transformation infrared) and TDS (thermal desorption spectroscopy) was decreased with the increase of deposition temperature. Raman results showed that the numbers and size of graphite cluster of ACLs deposited from each source were increased with the increase of deposition temperature. The extinction coefficient of ACL deposited at 550 °C from C6H12 was 0.51 and that from C3H6 was 0.48. The density of ACL deposited at 550 °C from C6H12 was 1.48 g/cm3 and that from C 3H6 was 1.45 g/cm3. The dry etching rate of ACL deposited at 550 °C from C6H12 was 1770 Å/min and that from C3H6 was 1840 Å/min. The deposition rate, dry etch rate and the amount of hydrocarbon contents of ACLs deposited from each carbon source were decreased with the increase of deposition temperature but extinction coefficient and density were increased with the increase of deposition temperature. We concluded that the variation behavior of the deposition characteristics and film properties of ACLs from C 6H12 with the increase of deposition temperature was the same as those of ACLs from C3H6. The high density and low dry etch rate of ACL from C6H12 can be explained by less hydrocarbon incorporation during deposition and these properties are more favorable for the dry etch hard mask application in semiconductor device fabrication. Crown

KW - ACL

KW - CH

KW - Dry etch

KW - Hard mask

KW - PECVD

KW - Semiconductor

UR - http://www.scopus.com/inward/record.url?scp=80051545457&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80051545457&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2011.04.077

DO - 10.1016/j.tsf.2011.04.077

M3 - Article

AN - SCOPUS:80051545457

VL - 519

SP - 6683

EP - 6687

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 20

ER -