Compare of SOI and SOS LIGBT structure for the thermal conductivity and self-heating characteristics

J. Y. Kim, S. W. Park, M. C. Jung, C. H. Kim, Man Young Sung, D. H. Rhie, E. G. Kang, N. G. Kim, S. C. Kim

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Abstract

The electrothermal simulation of high voltage LIGBT(Lateral Insulated Gate Bipolar Transistor) in thin Silicon on insulator (SOI) and Silicon on sapphire (SOS) for thermal conductivity and sink is performed by means of MEDICI. The finite element simulations demonstrate that the thermal conductivity of the buried oxide is an importan parameter for the modeling of the thermal behavior of silicon-on-insulator (SOI) devices. In this paper, using for SOI LIGBT, we simulated electrothermal for device that insulator layer with SiQ and Al 2O3 at before and after latch up to measured the thermal conductivity and temperature distribution of whole device and verified that SOI LIGBT with Al2O3 insulator had good thermal conductivity and reliability.

Original languageEnglish
Pages (from-to)1479-1483
Number of pages5
JournalMicroelectronics Reliability
Volume44
Issue number9-11 SPEC. ISS.
DOIs
Publication statusPublished - 2004 Sep 1

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ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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