Compare of SOI and SOS LIGBT structure for the thermal conductivity and self-heating characteristics

J. Y. Kim, S. W. Park, M. C. Jung, C. H. Kim, Man Young Sung, D. H. Rhie, E. G. Kang, N. G. Kim, S. C. Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The electrothermal simulation of high voltage LIGBT(Lateral Insulated Gate Bipolar Transistor) in thin Silicon on insulator (SOI) and Silicon on sapphire (SOS) for thermal conductivity and sink is performed by means of MEDICI. The finite element simulations demonstrate that the thermal conductivity of the buried oxide is an importan parameter for the modeling of the thermal behavior of silicon-on-insulator (SOI) devices. In this paper, using for SOI LIGBT, we simulated electrothermal for device that insulator layer with SiQ and Al 2O3 at before and after latch up to measured the thermal conductivity and temperature distribution of whole device and verified that SOI LIGBT with Al2O3 insulator had good thermal conductivity and reliability.

Original languageEnglish
Pages (from-to)1479-1483
Number of pages5
JournalMicroelectronics Reliability
Volume44
Issue number9-11 SPEC. ISS.
DOIs
Publication statusPublished - 2004 Sep 1

Fingerprint

Aluminum Oxide
Insulated gate bipolar transistors (IGBT)
Silicon
bipolar transistors
Sapphire
Thermal conductivity
sapphire
thermal conductivity
insulators
Heating
heating
silicon
latch-up
Oxides
heat sinks
Temperature distribution
high voltages
temperature distribution
simulation
Electric potential

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Compare of SOI and SOS LIGBT structure for the thermal conductivity and self-heating characteristics. / Kim, J. Y.; Park, S. W.; Jung, M. C.; Kim, C. H.; Sung, Man Young; Rhie, D. H.; Kang, E. G.; Kim, N. G.; Kim, S. C.

In: Microelectronics Reliability, Vol. 44, No. 9-11 SPEC. ISS., 01.09.2004, p. 1479-1483.

Research output: Contribution to journalArticle

Kim, JY, Park, SW, Jung, MC, Kim, CH, Sung, MY, Rhie, DH, Kang, EG, Kim, NG & Kim, SC 2004, 'Compare of SOI and SOS LIGBT structure for the thermal conductivity and self-heating characteristics', Microelectronics Reliability, vol. 44, no. 9-11 SPEC. ISS., pp. 1479-1483. https://doi.org/10.1016/j.microrel.2004.07.043
Kim, J. Y. ; Park, S. W. ; Jung, M. C. ; Kim, C. H. ; Sung, Man Young ; Rhie, D. H. ; Kang, E. G. ; Kim, N. G. ; Kim, S. C. / Compare of SOI and SOS LIGBT structure for the thermal conductivity and self-heating characteristics. In: Microelectronics Reliability. 2004 ; Vol. 44, No. 9-11 SPEC. ISS. pp. 1479-1483.
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AU - Park, S. W.

AU - Jung, M. C.

AU - Kim, C. H.

AU - Sung, Man Young

AU - Rhie, D. H.

AU - Kang, E. G.

AU - Kim, N. G.

AU - Kim, S. C.

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