Comparing techniques for fabricating polysilicon contacted emitter bipolar transistors

Ravi Bagri, Gerold Neudeck, William Klaasen, James Jungho Pak, James Logsdon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Four methods for fabricating polysilicon-contacted BJT's have been investigated. In the first method polysilicon was deposited using low-pressure chemical vapor deposition (LPCVD) at 620°C. In the remaining three methods a-Si was first deposited and then recrystallized to form polysilicon. In the second method a-Si was deposited using LPCVD at 580°C. The third method used plasma-enhanced chemical vapor deposition (PECVD) to deposit a-Si-H. The fourth method involved a plasma etch with argon or hydrogen prior to deposition of a-Si:H using PECVD. The results indicated that using the PECVD method for depositing a-Si-H without any prior plasma-etch step and recrystallizing it to form polysilicon resulted in the highest current gain (β) enhancement of 3.5 and also allowed the reduction of the polysilicon anneal temperature down to 800°C or 900°C from 1000°C. The compactness in the spread of the peak β values for the devices fabricated using this technique also reflects its ability to reproducible fabrication of polysilicon contacted shallow emitter BJT's.

Original languageEnglish
Title of host publicationUnknown Host Publication Title
EditorsJanice Jopke
Place of PublicationPiscataway, NJ, United States
PublisherPubl by IEEE
Pages63-66
Number of pages4
Publication statusPublished - 1988 Dec 1
Externally publishedYes

Fingerprint

Bipolar transistors
Polysilicon
Plasma enhanced chemical vapor deposition
Low pressure chemical vapor deposition
Plasmas
Hydrogen
Argon
Deposits
Fabrication

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Bagri, R., Neudeck, G., Klaasen, W., Pak, J. J., & Logsdon, J. (1988). Comparing techniques for fabricating polysilicon contacted emitter bipolar transistors. In J. Jopke (Ed.), Unknown Host Publication Title (pp. 63-66). Piscataway, NJ, United States: Publ by IEEE.

Comparing techniques for fabricating polysilicon contacted emitter bipolar transistors. / Bagri, Ravi; Neudeck, Gerold; Klaasen, William; Pak, James Jungho; Logsdon, James.

Unknown Host Publication Title. ed. / Janice Jopke. Piscataway, NJ, United States : Publ by IEEE, 1988. p. 63-66.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bagri, R, Neudeck, G, Klaasen, W, Pak, JJ & Logsdon, J 1988, Comparing techniques for fabricating polysilicon contacted emitter bipolar transistors. in J Jopke (ed.), Unknown Host Publication Title. Publ by IEEE, Piscataway, NJ, United States, pp. 63-66.
Bagri R, Neudeck G, Klaasen W, Pak JJ, Logsdon J. Comparing techniques for fabricating polysilicon contacted emitter bipolar transistors. In Jopke J, editor, Unknown Host Publication Title. Piscataway, NJ, United States: Publ by IEEE. 1988. p. 63-66
Bagri, Ravi ; Neudeck, Gerold ; Klaasen, William ; Pak, James Jungho ; Logsdon, James. / Comparing techniques for fabricating polysilicon contacted emitter bipolar transistors. Unknown Host Publication Title. editor / Janice Jopke. Piscataway, NJ, United States : Publ by IEEE, 1988. pp. 63-66
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