Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors

Changjoon Yoon, Jeongmin Kang, Donghyuk Yeom, Dong Young Jeong, Sangsig Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Back- and top-gate field-effect transistors (FETs) with channels composed of p-type Si nanowires were fabricated by a conventional photolithographic process and their electrical properties were characterized by conventional current-voltage (I - V) measurements. For a representative top-gate FET, the peak transconductance was enhanced from 2.24 to 72.2 nS, the field-effect mobility from 1.7 to 3.1 cm2/V s, and the Ion / Ioff ratio from 2.21 to 2.49×106, compared with those of a representative back-gate FET. The observed improvement of the electrical characteristics is mostly attributed to both the top-gate geometry and the relatively thin gate layer.

Original languageEnglish
Pages (from-to)293-296
Number of pages4
JournalSolid State Communications
Volume148
Issue number7-8
DOIs
Publication statusPublished - 2008 Nov 1

Fingerprint

Gates (transistor)
Field effect transistors
Nanowires
nanowires
field effect transistors
Transconductance
Electric properties
Ions
transconductance
Geometry
Electric potential
electrical properties
electric potential
geometry
ions

Keywords

  • A. Nanostructures
  • A. Semiconductors
  • B. Nanofabrications

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Chemistry

Cite this

Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors. / Yoon, Changjoon; Kang, Jeongmin; Yeom, Donghyuk; Jeong, Dong Young; Kim, Sangsig.

In: Solid State Communications, Vol. 148, No. 7-8, 01.11.2008, p. 293-296.

Research output: Contribution to journalArticle

Yoon, Changjoon ; Kang, Jeongmin ; Yeom, Donghyuk ; Jeong, Dong Young ; Kim, Sangsig. / Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors. In: Solid State Communications. 2008 ; Vol. 148, No. 7-8. pp. 293-296.
@article{ee5f79f739ef44ee980e5d1614f6c697,
title = "Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors",
abstract = "Back- and top-gate field-effect transistors (FETs) with channels composed of p-type Si nanowires were fabricated by a conventional photolithographic process and their electrical properties were characterized by conventional current-voltage (I - V) measurements. For a representative top-gate FET, the peak transconductance was enhanced from 2.24 to 72.2 nS, the field-effect mobility from 1.7 to 3.1 cm2/V s, and the Ion / Ioff ratio from 2.21 to 2.49×106, compared with those of a representative back-gate FET. The observed improvement of the electrical characteristics is mostly attributed to both the top-gate geometry and the relatively thin gate layer.",
keywords = "A. Nanostructures, A. Semiconductors, B. Nanofabrications",
author = "Changjoon Yoon and Jeongmin Kang and Donghyuk Yeom and Jeong, {Dong Young} and Sangsig Kim",
year = "2008",
month = "11",
day = "1",
doi = "10.1016/j.ssc.2008.09.011",
language = "English",
volume = "148",
pages = "293--296",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",
number = "7-8",

}

TY - JOUR

T1 - Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors

AU - Yoon, Changjoon

AU - Kang, Jeongmin

AU - Yeom, Donghyuk

AU - Jeong, Dong Young

AU - Kim, Sangsig

PY - 2008/11/1

Y1 - 2008/11/1

N2 - Back- and top-gate field-effect transistors (FETs) with channels composed of p-type Si nanowires were fabricated by a conventional photolithographic process and their electrical properties were characterized by conventional current-voltage (I - V) measurements. For a representative top-gate FET, the peak transconductance was enhanced from 2.24 to 72.2 nS, the field-effect mobility from 1.7 to 3.1 cm2/V s, and the Ion / Ioff ratio from 2.21 to 2.49×106, compared with those of a representative back-gate FET. The observed improvement of the electrical characteristics is mostly attributed to both the top-gate geometry and the relatively thin gate layer.

AB - Back- and top-gate field-effect transistors (FETs) with channels composed of p-type Si nanowires were fabricated by a conventional photolithographic process and their electrical properties were characterized by conventional current-voltage (I - V) measurements. For a representative top-gate FET, the peak transconductance was enhanced from 2.24 to 72.2 nS, the field-effect mobility from 1.7 to 3.1 cm2/V s, and the Ion / Ioff ratio from 2.21 to 2.49×106, compared with those of a representative back-gate FET. The observed improvement of the electrical characteristics is mostly attributed to both the top-gate geometry and the relatively thin gate layer.

KW - A. Nanostructures

KW - A. Semiconductors

KW - B. Nanofabrications

UR - http://www.scopus.com/inward/record.url?scp=52949113806&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=52949113806&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2008.09.011

DO - 10.1016/j.ssc.2008.09.011

M3 - Article

AN - SCOPUS:52949113806

VL - 148

SP - 293

EP - 296

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 7-8

ER -