Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors

Changjoon Yoon, Jeongmin Kang, Donghyuk Yeom, Dong Young Jeong, Sangsig Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)


Back- and top-gate field-effect transistors (FETs) with channels composed of p-type Si nanowires were fabricated by a conventional photolithographic process and their electrical properties were characterized by conventional current-voltage (I - V) measurements. For a representative top-gate FET, the peak transconductance was enhanced from 2.24 to 72.2 nS, the field-effect mobility from 1.7 to 3.1 cm2/V s, and the Ion / Ioff ratio from 2.21 to 2.49×106, compared with those of a representative back-gate FET. The observed improvement of the electrical characteristics is mostly attributed to both the top-gate geometry and the relatively thin gate layer.

Original languageEnglish
Pages (from-to)293-296
Number of pages4
JournalSolid State Communications
Issue number7-8
Publication statusPublished - 2008 Nov 1



  • A. Nanostructures
  • A. Semiconductors
  • B. Nanofabrications

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Chemistry

Cite this