Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors

Changjoon Yoon, Kihyun Keem, Jeongmin Kang, Dong Young Jeong, Moon Sook Lee, In Seok Yeo, U. In Chung, Joo Tae Moon, Sangsig Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Top-gate(TG) field effect transistors (FETs) with channels composed of Si nanowires were successfully fabricated in this study using photolithographic processes. In the TG FETs fabricated on oxidized Si substrates, the channels composed of Si nanowires with diameters of about 100 nm with natural SiO 2. The surfaces of the Si nanowires with natural SiO2 were covered with the gate metal to form TG FETs.

Original languageEnglish
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages424-425
Number of pages2
DOIs
Publication statusPublished - 2006
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: 2006 Oct 222006 Oct 25

Publication series

Name2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume1

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
CountryKorea, Republic of
CityGyeongju
Period06/10/2206/10/25

Keywords

  • Comparison
  • FET
  • Nanowire
  • Si
  • Top-gate

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

Fingerprint Dive into the research topics of 'Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors'. Together they form a unique fingerprint.

  • Cite this

    Yoon, C., Keem, K., Kang, J., Jeong, D. Y., Lee, M. S., Yeo, I. S., Chung, U. I., Moon, J. T., & Kim, S. (2006). Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (pp. 424-425). [4388798] (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1). https://doi.org/10.1109/NMDC.2006.4388798