Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors

Changjoon Yoon, Kihyun Keem, Jeongmin Kang, Dong Young Jeong, Moon Sook Lee, In Seok Yeo, U. In Chung, Joo Tae Moon, Sangsig Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Top-gate(TG) field effect transistors (FETs) with channels composed of Si nanowires were successfully fabricated in this study using photolithographic processes. In the TG FETs fabricated on oxidized Si substrates, the channels composed of Si nanowires with diameters of about 100 nm with natural SiO 2. The surfaces of the Si nanowires with natural SiO2 were covered with the gate metal to form TG FETs.

Original languageEnglish
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages424-425
Number of pages2
Volume1
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: 2006 Oct 222006 Oct 25

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
CountryKorea, Republic of
CityGyeongju
Period06/10/2206/10/25

Fingerprint

Gates (transistor)
Field effect transistors
Nanowires
Metals
Substrates

Keywords

  • Comparison
  • FET
  • Nanowire
  • Si
  • Top-gate

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

Cite this

Yoon, C., Keem, K., Kang, J., Jeong, D. Y., Lee, M. S., Yeo, I. S., ... Kim, S. (2006). Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (Vol. 1, pp. 424-425). [4388798] https://doi.org/10.1109/NMDC.2006.4388798

Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors. / Yoon, Changjoon; Keem, Kihyun; Kang, Jeongmin; Jeong, Dong Young; Lee, Moon Sook; Yeo, In Seok; Chung, U. In; Moon, Joo Tae; Kim, Sangsig.

2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1 2006. p. 424-425 4388798.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yoon, C, Keem, K, Kang, J, Jeong, DY, Lee, MS, Yeo, IS, Chung, UI, Moon, JT & Kim, S 2006, Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. vol. 1, 4388798, pp. 424-425, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06/10/22. https://doi.org/10.1109/NMDC.2006.4388798
Yoon C, Keem K, Kang J, Jeong DY, Lee MS, Yeo IS et al. Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1. 2006. p. 424-425. 4388798 https://doi.org/10.1109/NMDC.2006.4388798
Yoon, Changjoon ; Keem, Kihyun ; Kang, Jeongmin ; Jeong, Dong Young ; Lee, Moon Sook ; Yeo, In Seok ; Chung, U. In ; Moon, Joo Tae ; Kim, Sangsig. / Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors. 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1 2006. pp. 424-425
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