Abstract
The electrical properties, admittance spectra, microcathodoluminescence, and deep trap spectra of p -AlGaN films with an Al mole fraction up to 45% grown by both metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were compared. The ionization energy of Mg increases from 0.15 to 0.17 eV in p -GaN to 0.3 eV in 45% Al p -AlGaN. In p -GaN films grown by MBE and MOCVD and in MOCVD grown p -AlGaN, we observed additional acceptors with a concentration an order lower than that of Mg acceptors, with a higher hole capture cross section and an ionization energy close to that of Mg. For some of the MBE grown p -AlGaN, we also detected the presence of additional acceptor centers, but in that case the centers were located near the p -AlGaN layer interface with the semi-insulating AlGaN buffer and showed activation energies considerably lower than those of Mg.
| Original language | English |
|---|---|
| Article number | 073706 |
| Journal | Journal of Applied Physics |
| Volume | 106 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2009 Oct 23 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
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Comparison of electrical properties and deep traps in p Alx Ga1-xN grown by molecular beam epitaxy and metal organic chemical vapor deposition. / Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Kozhukhova, E. A.; Dabiran, A. M.; Chow, P. P.; Wowchak, A. M.; Lee, In-Hwan; Ju, Jin Woo; Pearton, S. J.
In: Journal of Applied Physics, Vol. 106, No. 7, 073706, 23.10.2009.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Comparison of electrical properties and deep traps in p Alx Ga1-xN grown by molecular beam epitaxy and metal organic chemical vapor deposition
AU - Polyakov, A. Y.
AU - Smirnov, N. B.
AU - Govorkov, A. V.
AU - Kozhukhova, E. A.
AU - Dabiran, A. M.
AU - Chow, P. P.
AU - Wowchak, A. M.
AU - Lee, In-Hwan
AU - Ju, Jin Woo
AU - Pearton, S. J.
PY - 2009/10/23
Y1 - 2009/10/23
N2 - The electrical properties, admittance spectra, microcathodoluminescence, and deep trap spectra of p -AlGaN films with an Al mole fraction up to 45% grown by both metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were compared. The ionization energy of Mg increases from 0.15 to 0.17 eV in p -GaN to 0.3 eV in 45% Al p -AlGaN. In p -GaN films grown by MBE and MOCVD and in MOCVD grown p -AlGaN, we observed additional acceptors with a concentration an order lower than that of Mg acceptors, with a higher hole capture cross section and an ionization energy close to that of Mg. For some of the MBE grown p -AlGaN, we also detected the presence of additional acceptor centers, but in that case the centers were located near the p -AlGaN layer interface with the semi-insulating AlGaN buffer and showed activation energies considerably lower than those of Mg.
AB - The electrical properties, admittance spectra, microcathodoluminescence, and deep trap spectra of p -AlGaN films with an Al mole fraction up to 45% grown by both metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were compared. The ionization energy of Mg increases from 0.15 to 0.17 eV in p -GaN to 0.3 eV in 45% Al p -AlGaN. In p -GaN films grown by MBE and MOCVD and in MOCVD grown p -AlGaN, we observed additional acceptors with a concentration an order lower than that of Mg acceptors, with a higher hole capture cross section and an ionization energy close to that of Mg. For some of the MBE grown p -AlGaN, we also detected the presence of additional acceptor centers, but in that case the centers were located near the p -AlGaN layer interface with the semi-insulating AlGaN buffer and showed activation energies considerably lower than those of Mg.
UR - http://www.scopus.com/inward/record.url?scp=70350092553&partnerID=8YFLogxK
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U2 - 10.1063/1.3238508
DO - 10.1063/1.3238508
M3 - Article
AN - SCOPUS:70350092553
VL - 106
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 7
M1 - 073706
ER -