Comparison of electrical properties and deep traps in p Alx Ga1-xN grown by molecular beam epitaxy and metal organic chemical vapor deposition

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, A. M. Dabiran, P. P. Chow, A. M. Wowchak, In Hwan Lee, Jin Woo Ju, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

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Physics & Astronomy