Comparison of hole traps in n-GaN grown by hydride vapor phase epitaxy, metal organic chemical vapor deposition, and epitaxial lateral overgrowth

A. Y. Polyakov, In-Hwan Lee, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, S. J. Pearton

Research output: Contribution to journal › Article

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Abstract

Optical deep level spectroscopy (ODLTS) and microcathodoluminescence (MCL) spectra were measured for a large group of n-GaN samples grown via metalorganic chemical vapor deposition (MOCVD), epitaxial lateral overgrowth (ELOG), or hydride vapor phase epitaxy (HVPE). In the MOCVD and ELOG samples, the ionization energy of dominant hole traps H1 was dependent on the excitation conditions and was ∼0.9 eV for high injection levels providing saturation of the ODLTS peak magnitude. The trap concentration increased with increasing Si donor concentration and correlated with the yellow band intensity in the MCL spectra. For the HVPE samples, the hole trap spectra were radically different from the MOCVD case: four hole traps-H2, H3, H4, and H5-with activation energies of 0.55, 0.65, 0.85, and 1.2 eV, respectively, were detected. In the MCL spectra, a broad green band that peaked near 2.5 eV was observed in addition to the usual yellow luminescence near 2.3 eV. This green band was attributed to the transitions involving the H4 hole traps. Possible identities of the hole traps detected in the MOCVD/ELOG and HVPE samples are discussed.

Original languageEnglish
Article number123701
JournalJournal of Applied Physics
Volume109
Issue number12
DOIs
Publication statusPublished - 2011 Jun 15
Externally publishedYes

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vapor phase epitaxy
hydrides
metalorganic chemical vapor deposition
traps
spectroscopy
luminescence
injection
activation energy
saturation
ionization
excitation
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Comparison of hole traps in n-GaN grown by hydride vapor phase epitaxy, metal organic chemical vapor deposition, and epitaxial lateral overgrowth. / Polyakov, A. Y.; Lee, In-Hwan; Smirnov, N. B.; Govorkov, A. V.; Kozhukhova, E. A.; Pearton, S. J.

In: Journal of Applied Physics, Vol. 109, No. 12, 123701, 15.06.2011.

Research output: Contribution to journal › Article

Polyakov, AY, Lee, I-H, Smirnov, NB, Govorkov, AV, Kozhukhova, EA & Pearton, SJ 2011, 'Comparison of hole traps in n-GaN grown by hydride vapor phase epitaxy, metal organic chemical vapor deposition, and epitaxial lateral overgrowth', Journal of Applied Physics, vol. 109, no. 12, 123701. https://doi.org/10.1063/1.3599894
Polyakov AY, Lee I-H, Smirnov NB, Govorkov AV, Kozhukhova EA, Pearton SJ. Comparison of hole traps in n-GaN grown by hydride vapor phase epitaxy, metal organic chemical vapor deposition, and epitaxial lateral overgrowth. Journal of Applied Physics. 2011 Jun 15;109(12). 123701. https://doi.org/10.1063/1.3599894
Polyakov, A. Y. ; Lee, In-Hwan ; Smirnov, N. B. ; Govorkov, A. V. ; Kozhukhova, E. A. ; Pearton, S. J. / Comparison of hole traps in n-GaN grown by hydride vapor phase epitaxy, metal organic chemical vapor deposition, and epitaxial lateral overgrowth. In: Journal of Applied Physics. 2011 ; Vol. 109, No. 12.
@article{f23de888c9f24c3fbf3b34572688c420,
title = "Comparison of hole traps in n-GaN grown by hydride vapor phase epitaxy, metal organic chemical vapor deposition, and epitaxial lateral overgrowth",
abstract = "Optical deep level spectroscopy (ODLTS) and microcathodoluminescence (MCL) spectra were measured for a large group of n-GaN samples grown via metalorganic chemical vapor deposition (MOCVD), epitaxial lateral overgrowth (ELOG), or hydride vapor phase epitaxy (HVPE). In the MOCVD and ELOG samples, the ionization energy of dominant hole traps H1 was dependent on the excitation conditions and was ∼0.9 eV for high injection levels providing saturation of the ODLTS peak magnitude. The trap concentration increased with increasing Si donor concentration and correlated with the yellow band intensity in the MCL spectra. For the HVPE samples, the hole trap spectra were radically different from the MOCVD case: four hole traps-H2, H3, H4, and H5-with activation energies of 0.55, 0.65, 0.85, and 1.2 eV, respectively, were detected. In the MCL spectra, a broad green band that peaked near 2.5 eV was observed in addition to the usual yellow luminescence near 2.3 eV. This green band was attributed to the transitions involving the H4 hole traps. Possible identities of the hole traps detected in the MOCVD/ELOG and HVPE samples are discussed.",
author = "Polyakov, {A. Y.} and In-Hwan Lee and Smirnov, {N. B.} and Govorkov, {A. V.} and Kozhukhova, {E. A.} and Pearton, {S. J.}",
year = "2011",
month = "6",
day = "15",
doi = "10.1063/1.3599894",
language = "English",
volume = "109",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

TY - JOUR

T1 - Comparison of hole traps in n-GaN grown by hydride vapor phase epitaxy, metal organic chemical vapor deposition, and epitaxial lateral overgrowth

AU - Polyakov, A. Y.

AU - Lee, In-Hwan

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Kozhukhova, E. A.

AU - Pearton, S. J.

PY - 2011/6/15

Y1 - 2011/6/15

N2 - Optical deep level spectroscopy (ODLTS) and microcathodoluminescence (MCL) spectra were measured for a large group of n-GaN samples grown via metalorganic chemical vapor deposition (MOCVD), epitaxial lateral overgrowth (ELOG), or hydride vapor phase epitaxy (HVPE). In the MOCVD and ELOG samples, the ionization energy of dominant hole traps H1 was dependent on the excitation conditions and was ∼0.9 eV for high injection levels providing saturation of the ODLTS peak magnitude. The trap concentration increased with increasing Si donor concentration and correlated with the yellow band intensity in the MCL spectra. For the HVPE samples, the hole trap spectra were radically different from the MOCVD case: four hole traps-H2, H3, H4, and H5-with activation energies of 0.55, 0.65, 0.85, and 1.2 eV, respectively, were detected. In the MCL spectra, a broad green band that peaked near 2.5 eV was observed in addition to the usual yellow luminescence near 2.3 eV. This green band was attributed to the transitions involving the H4 hole traps. Possible identities of the hole traps detected in the MOCVD/ELOG and HVPE samples are discussed.

AB - Optical deep level spectroscopy (ODLTS) and microcathodoluminescence (MCL) spectra were measured for a large group of n-GaN samples grown via metalorganic chemical vapor deposition (MOCVD), epitaxial lateral overgrowth (ELOG), or hydride vapor phase epitaxy (HVPE). In the MOCVD and ELOG samples, the ionization energy of dominant hole traps H1 was dependent on the excitation conditions and was ∼0.9 eV for high injection levels providing saturation of the ODLTS peak magnitude. The trap concentration increased with increasing Si donor concentration and correlated with the yellow band intensity in the MCL spectra. For the HVPE samples, the hole trap spectra were radically different from the MOCVD case: four hole traps-H2, H3, H4, and H5-with activation energies of 0.55, 0.65, 0.85, and 1.2 eV, respectively, were detected. In the MCL spectra, a broad green band that peaked near 2.5 eV was observed in addition to the usual yellow luminescence near 2.3 eV. This green band was attributed to the transitions involving the H4 hole traps. Possible identities of the hole traps detected in the MOCVD/ELOG and HVPE samples are discussed.

UR - http://www.scopus.com/inward/record.url?scp=79960193469&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79960193469&partnerID=8YFLogxK

U2 - 10.1063/1.3599894

DO - 10.1063/1.3599894

M3 - Article

VL - 109

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 12

M1 - 123701

ER -

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